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Michael Geva

Observed names: GEVA, MICHAEL, M Geva, M. Geva
OpenAlex ID: A5109126915
Noncontact semiconductor wafer characterization with the terahertz Hall effect
1997 · D. M. Mittleman, J. Cunningham, et al. · Applied Physics Letters · 186
Plasma Centrifuge
1981 · M. Krishnan, M. Geva, et al. · Physical Review Letters · 103
Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy
1998 · P. De Wolf, M. Geva, et al. · Applied Physics Letters · 85
Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
1999 · H. P. Xin, C. W. Tu, et al. · Applied Physics Letters · 75
Element and isotope separation in a vacuum-arc centrifuge
1984 · M. Geva, M. Krishnan, et al. · Journal of Applied Physics · 66
Excimer laser-induced deposition of InP: Crystallographic and mechanistic studies
1985 · V. M. Donnelly, D. Brasen, et al. · Journal of Applied Physics · 65
Excimer laser induced deposition of InP and indium-oxide films
1984 · V. M. Donnelly, M. Geva, et al. · Applied Physics Letters · 58
Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor
1991 · A. Katz, A. Feingold, et al. · Journal of Applied Physics · 48
Interface disorder in AlAs/(Al)GaAs Bragg reflectors
1991 · M. T. Asom, M. Geva, et al. · Applied Physics Letters · 46
Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers
1994 · M. Chand, S.N.G. Chu, et al. · IEEE Journal of Quantum Electronics · 41
The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP
1992 · A. Katz, A. Feingold, et al. · Journal of Applied Physics · 37
Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy
1995 · S. N. G Chu, R. A. Logan, et al. · Journal of Applied Physics · 34
Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular-beam epitaxy
1991 · Naresh Chand, S. N. G. Chu, et al. · Applied Physics Letters · 30
Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
1999 · B. F. Levine, C. J. Pinzone, et al. · Applied Physics Letters · 27
Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy
1999 · P. De Wolf, M. Geva, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 27
Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy
2000 · H. P. Xin, C. W. Tu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 26
Residual oxygen levels in AlGaAs/GaAs quantum-well laser structures: Effects of Si and Be doping and substrate misorientation
1991 · Naresh Chand, A. S. Jordan, et al. · Applied Physics Letters · 26
Direct evidence for the role of gold migration in the formation of dark-spot defects in 1.3-μm InP/InGaAsP light-emitting diodes
1984 · A. K. Chin, C. L. Zipfel, et al. · Applied Physics Letters · 26
Metal–insulator–semiconductor tunneling microscope: two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy
2000 · S. Richter, M. Geva, et al. · Applied Physics Letters · 22
Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy
1996 · R. A. Logan, S. N. G. Chu, et al. · Journal of Applied Physics · 22
Migration and gettering of Si, Be, and ambient-related O in AlGaAs/GaAs laser structures
1992 · Naresh Chand, S. N. G. Chu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 22
Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency CH 4 / H 2 / Ar or C 2 H 6 / H 2 / Ar Discharges
1991 · S. J. Pearton, U. K. Chakrabarti, et al. · Journal of The Electrochemical Society · 21
Reproducible group-V partial pressure rapid thermal annealing of InP and GaAs
1990 · S. J. Pearton, A. Katz, et al. · Journal of Applied Physics · 20
Zn gettering in InGaAs/InP interfaces
1986 · M. Geva, T. E. Seidel · Journal of Applied Physics · 19
Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
1995 · R.A. Hamm, S. Chandrasekhar, et al. · Journal of Crystal Growth · 18
Works count: 117
Citation count: 1,690
H-index: 21
I10-index: 47
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