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Lianghua Huang
Observed names:
Huang, Lianghua,
L S Huang,
L. S. Huang,
L.S. Huang
Observed institutions:
Institute of Electronics,
United Microelectronics (Taiwan),
United Microelectronics (United States)
OpenAlex ID:
A5109146261
Wan: Open and Advanced Large-Scale Video Generative Models
2025
·
Wan, Team
, Wang, Ang
, et al.
·
arXiv (Cornell University)
·
14
PDF
A 28nm poly/SiON CMOS technology for low-power SoC applications
2011
·
C. W. Liang
, Miaodi Chen
, et al.
·
Symposium on VLSI Technology
·
12
Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks
2012
·
Nathan Hui-Hsin Hsu
, Jian-Wen You
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
Gate Leakage for 28 nm Stacked HfZrOx Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures
2014
·
Shea-Jue Wang
, Mu-Chun Wang
, et al.
·
IEEE Transactions on Plasma Science
·
8
Gate Leakage Characteristics for 28 nm HfZrOx pMOSFETs After DPN Process Treatment With Different Nitrogen Concentration
2014
·
Win-Der Lee
, Mu-Chun Wang
, et al.
·
IEEE Transactions on Plasma Science
·
7
Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment
2015
·
Shea-Jue Wang
, Mu-Chun Wang
, et al.
·
Microelectronics Reliability
·
6
Approximate calculating methods concerning the electron transit time for a vacuum microelectronics triode
2000
·
B X Chen
, G Y Liu
, et al.
·
Journal of Physics D Applied Physics
·
5
PDF
Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs
2013
·
Mu-Chun Wang
, Chong-Kuan Du
, et al.
·
International Symposium on Next-Generation Electronics
·
3
Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment
2015
·
Win-Der Lee
, Mu-Chun Wang
, et al.
·
Microelectronic Engineering
·
2
ChatDiT: A Training-Free Baseline for Task-Agnostic Free-Form Chatting with Diffusion Transformers
2024
·
Huang, Lianghua
, Wang, Wei
, et al.
·
arXiv (Cornell University)
·
1
PDF
In-Context LoRA for Diffusion Transformers
2024
·
Huang, Lianghua
, Wang, Wei
, et al.
·
arXiv (Cornell University)
·
1
PDF
Group Diffusion Transformers are Unsupervised Multitask Learners
2024
·
Huang, Lianghua
, Wang, Wei
, et al.
·
arXiv (Cornell University)
·
1
PDF
Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures
2014
·
Shea Jue Wang
, Mu Chun Wang
, et al.
·
International Journal of Nanotechnology
·
1
Electrical quality of 28nm HK/MG MOSFETs with PDA and DPN treatment
2014
·
Win-Der Lee
, Chun-Wei Lian
, et al.
·
International Symposium on Next-Generation Electronics
·
1
IDEA-Bench: How Far are Generative Models from Professional Designing?
2024
·
Liang, Chen
, Huang, Lianghua
, et al.
·
arXiv (Cornell University)
PDF
The μeq fitting for mixed current model of MOSFETs considering horizontal electric field
2018
·
Heng-Sheng Huang
, Ping-Ray Huang
, et al.
·
International Symposium on Next-Generation Electronics
CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures
2014
·
Shea-Jue Wang
, Chao-Wang Li
, et al.
·
International Symposium on Next-Generation Electronics
GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures
2014
·
Shea-Jue Wang
, Wen-Sheng Chen
, et al.
·
International Symposium on Next-Generation Electronics
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Works count:
18
Citation count:
72
H-index:
6
I10-index:
3
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