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Author

Koichi Naniwae

Institution: Ushio (Japan)
ORCID: 0009-0006-5363-4623
Observed ORCID: 0009-0006-5363-4623
OpenAlex ID: A5109172089
First demonstration of novel active multi-mode interferometer (MMI) LDs integrated with 1st order-mode permitted waveguides
2005 · Kiichi Hamamoto, Jan De Merlier, et al. · IEICE Electronics Express · 19
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Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method
2022 · Moe Shimokawa, Yuya Yamada, et al. · Applied Physics Express · 15
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MBE growth of ZnCdSe and MgZnCdSe alloys on InP substrates with a GaInAs buffer-layer
1996 · Koichi Naniwae, Hiroshi Iwata, et al. · Journal of Crystal Growth · 14
Wideband External Cavity Wavelength-Tunable Laser Utilizing a Liquid-Crystal-Based Mirror and an Intracavity Etalon
2007 · Kenji Sato, Kenji Mizutani, et al. · Journal of Lightwave Technology · 13
Epitaxial growth of n- and p-type ZnCdSe on InP
1998 · Koichi Naniwae, Hiroshi Iwata, et al. · Journal of Crystal Growth · 12
Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes
2025 · Takumu Saito, Rintaro Miyake, et al. · Applied Physics Letters · 11
Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method
2023 · Toma Nishibayashi, Ryosuke Kondo, et al. · Applied Physics Express · 11
Improvement of vertical light extraction from GaN‐based LEDs on moth‐eye patterned sapphire substrates
2015 · Masaki Ohya, Koichi Naniwae, et al. · physica status solidi (a) · 9
Molecular beam epitaxial growth and optical properties of lattice-matched MgxZn1−xSeyTe1−y alloys on InP substrates
1999 · Koichi Naniwae, Hiroshi Iwata, et al. · Applied Physics Letters · 9
Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics
2024 · Toshihiko Fukamachi, Junichi Nishinaka, et al. · Applied Physics Express · 7
High-power operation of inner-stripe GaN-based blue-violet laser diodes
2007 · Masaki Ohya, Kazuhisa Fukuda, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate
2026 · Rintaro Miyake, Takumu Saito, et al. · Applied Physics Letters · 6
Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes
2025 · Toshihiko Fukamachi, Junichi Nishinaka, et al. · Japanese Journal of Applied Physics · 6
Advantages of the moth‐eye patterned sapphire substrate for the high performance nitride based LEDs
2014 · Toshiyuki Kondo, Tsukasa Kitano, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride
2002 · Koichi Naniwae, Kaori Kurihara, et al. · Journal of Crystal Growth · 6
Wavelength-selectable microarray light sources for wideband DWDM
2002 · Hiroshi M. Hatakeyama, Yoshitaka Yokoyama, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Improvement of InGaN power converters for optical wireless power transmission
2025 · Junichi Suzuki, Ryusei Takahashi, et al. · Japanese Journal of Applied Physics · 4
Over 50% carrier injection efficiency in AlGaN-based UV-B laser diodes enabled by combining Al-content-drop design and low-temperature epitaxy
2025 · Takumu Saito, Rintaro Miyake, et al. · Applied Physics Letters · 4
Enhancing the Carrier Injection Efficiency in AlGaN‐Based UV‐B Laser Diodes
2025 · Takumu Saito, Rintaro Miyake, et al. · physica status solidi (a) · 4
Investigation of characteristics of GaN-based blue DFB laser diodes over a wide detuning range
2025 · Toshihiko Fukamachi, Junichi Nishinaka, et al. · Japanese Journal of Applied Physics · 4
First direct observation of self-imaging effect in active multimode-interference semiconductor laser diodes
2006 · Syogo Shimizu, Mohd Dannial Bin Razali, et al. · Applied Physics Letters · 3
InGaN photovoltaic cells for applications in laser power beaming
2024 · Masahiro Koga, Shunsuke Shibui, et al. · Gallium Nitride Materials and Devices · 2
1 V and Stable Dynamic Operation of Laser Diode Using Active Multi-Mode Interferometer
2005 · Syogo Shimizu, Mohd Dannial Bin Razali, et al. · Japanese Journal of Applied Physics · 2
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Effect of Interface Manipulation for MBE Growth of AlN on 6H-SiC
2000 · Koichi Naniwae, Jeff Hartman, et al. · MRS Proceedings · 2
Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes
1998 · Hiroshi Iwata, Koichi Naniwae, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Works count: 32
Citation count: 183
H-index: 9
I10-index: 7
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