Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
T. Takebe
Observed names:
T Takebe,
Toshihiko TAKEBE,
Toshihiko Takebe,
Toshihiko Takebe Toshihiko Takebe,
武部 俊彦
Institutions:
Japan Atomic Energy Agency,
Sugino Machine Limited (Japan),
Collaborative Laboratories for Advanced Decommissioning Science
Observed institutions:
Japan Atomic Energy Agency,
Kyoto University,
Advanced Telecommunications Research Institute International,
Sumitomo Electric Industries (Japan),
Sugino Machine Limited (Japan),
Collaborative Laboratories for Advanced Decommissioning Science
show all 6
OpenAlex ID:
A5109182263
Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties
1982
·
T. Takebe
, J. Saraie
, et al.
·
Journal of Applied Physics
·
85
ZnSe-based white LEDs
2000
·
K Katayama
, H Matsubara
, et al.
·
Journal of Crystal Growth
·
81
Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates
1998
·
K. Katayama
, H. Yao
, et al.
·
Applied Physics Letters
·
70
Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates
1997
·
T. Takebe
, M. Fujii
, et al.
·
Journal of Applied Physics
·
67
Pregrowth treatment dependence of surface morphology for GaAs grown on exactly oriented (111)A substrates by molecular-beam epitaxy
1993
·
Teiji Yamamoto
, Makoto Inai
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
40
Fundamental Selective Etching Characteristics of HF + H 2 O 2 + H 2 O Mixtures for GaAs
1993
·
T. Takebe
, T. Yamamoto
, et al.
·
Journal of The Electrochemical Society
·
34
Study of the surface barrier of the metal–n-CdTe contact
1978
·
T. Takebe
, J. Saraie
, et al.
·
physica status solidi (a)
·
34
Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles
1992
·
M. Fujii
, T. Yamamoto
, et al.
·
Surface Science
·
33
DLTS studies of deep levels in semiconducting N-CdTe single crystals
1982
·
T. Takebe
, T. Hirata
, et al.
·
Journal of Physics and Chemistry of Solids
·
27
Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy
1993
·
Makoto Inai
, Teiji Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
19
Study of facet generation during MBE of GaAs on (111)A substrates patterned with ridge-type triangles
1993
·
T. Takebe
, M. Fujii
, et al.
·
Journal of Crystal Growth
·
18
Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates
1993
·
Makoto Inai
, Teiji Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
16
PDF
Element-Selective Observation of Electronic Structure Transition between Semiconducting and Metallic States in Boron-Doped Diamond Using Soft X-ray Emission and Absorption Spectroscopy
2005
·
Junji Iihara
, Yasuji Muramatsu
, et al.
·
Japanese Journal of Applied Physics
·
15
MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopant
1993
·
K. Fujita
, A. Shinoda
, et al.
·
Journal of Crystal Growth
·
13
Lateral P-N Subband Junctions Fabricated on Patterned Substrates
1993
·
Teiji Yamamoto
, Makoto Inai
, et al.
·
Japanese Journal of Applied Physics
·
13
Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxy
1993
·
T. Yamamoto
, M. Inai
, et al.
·
Journal of Crystal Growth
·
11
Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Wells on (111)A Patterned Substrates
1993
·
Teiji Yamamoto
, Makoto Inai
, et al.
·
Japanese Journal of Applied Physics
·
10
PDF
Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
1993
·
Kazuhisa Fujita
, Teiji Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
10
PDF
Optical and electrical characterization of lateral p-n junctions on GaAs (111)A patterned substrates
1992
·
M. Fujii
, T. Takebe
, et al.
·
Superlattices and Microstructures
·
10
Two‐acceptor levels in the band gap of boron‐doped diamond semiconductors analyzed by soft x‐ray absorption spectroscopy and DV–Xα calculations
2007
·
Yasuji Muramatsu
, Toshihiko Takebe
, et al.
·
X-Ray Spectrometry
·
8
Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy
1992
·
David R. Lovell
, Teiji Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
8
PDF
Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates
1997
·
Hiroaki Yoshida
, Makoto Kiyama
, et al.
·
Japanese Journal of Applied Physics
·
7
PDF
Facet generation during molecular beam epitaxy of GaAs/AlGaAs multilayers on GaAs (001) patterned substrates
1996
·
T. Takebe
, M. Fujii
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
7
Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy
1998
·
T. Takebe
, T. Watanabe
, et al.
·
Superlattices and Microstructures
·
5
Low Diffusivity of Dopants in (111)A GaAs
1993
·
Akinori Shinoda
, Teiji Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
Show more works
View as search
Works count:
71
Citation count:
687
H-index:
13
I10-index:
19
Year
Topic
Type