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Berthold Hahn

High-Power and High-Efficiency InGaN-Based Light Emitters
2009 · Ansgar Laubsch, Matthias Sabathil, et al. · IEEE Transactions on Electron Devices · 345
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
2009 · Matteo Meneghini, Nicola Trivellin, et al. · Journal of Applied Physics · 133
New developments in green LEDs
2009 · Matthias Peter, Ansgar Laubsch, et al. · physica status solidi (a) · 92
Development of high-efficiency and high-power vertical light emitting diodes
2014 · Berthold Hahn, Bastian Galler, et al. · Japanese Journal of Applied Physics · 65
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Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
2013 · Bastian Galler, Hans-Jürgen Lugauer, et al. · Applied Physics Express · 58
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs
2012 · Matteo Meneghini, Simone Vaccari, et al. · IEEE Transactions on Electron Devices · 46
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes
2012 · Davide Saguatti, Luca Bidinelli, et al. · IEEE Transactions on Electron Devices · 35
Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing
2010 · Matteo Meneghini, Augusto Tazzoli, et al. · IEEE Electron Device Letters · 30
Luminescence properties of thick InGaN quantum‐wells
2009 · Ansgar Laubsch, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28
Status of high efficiency and high power ThinGaN®‐LED development
2009 · Johannes Baur, Frank Baumann, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 27
Light extraction technologies for high-efficiency GaInN-LED devices
2003 · Volker Haerle, Berthold Hahn, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 23
Photoassisted growth and nitrogen doping of ZnSe
1997 · Berthold Hahn, Marcus Deufel, et al. · Journal of Crystal Growth · 19
Advanced technologies for high-efficiency GaInN LEDs for solid state lighting
2004 · Volker Harle, Berthold Hahn, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13
Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements
2018 · Wolf-Alexander Quitsch, Daniel Sager, et al. · Journal of Applied Physics · 12
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events
2010 · Matteo Meneghini, Augusto Tazzoli, et al. · IEEE International Reliability Physics Symposium proceedings · 12
Micro‐electroluminescence of cyan InGaN‐based multiple quantum well structures
2011 · Tobias Meyer, Matthias Peter, et al. · physica status solidi (a) · 9
(Invited) Wafer Bonding for the Manufacture of High-Brightness and High-Efficiency Light-Emitting Diodes
2010 · Andreas E. Plößl, Johannes Baur, et al. · ECS Transactions · 8
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Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells
2009 · Julia Danhof, Clemens Vierheilig, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices
1996 · Marcus J. Kastner, Berthold Hahn, et al. · Journal of Crystal Growth · 7
Investigations on strain relaxation of ZnSxSe1−x layers grown by metalorganic vapor phase epitaxy
1997 · Marcus J. Kastner, Gabriella Leo, et al. · Journal of Crystal Growth · 6
In situ reflectance difference spectroscopy of ZnSe-based semiconductor surfaces
1997 · Marcus J. Kastner, Berthold Hahn, et al. · Journal of Crystal Growth · 6
High power LEDs for solid state lighting
2010 · Berthold Hahn · European Solid-State Device Research Conference · 5
Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures
2009 · Clemens Vierheilig, Ulrich T. Schwarz, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
Reliability of InGaN‐based LEDs submitted to reverse‐bias stress
2010 · Matteo Meneghini, Nicola Trivellin, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3
Investigation of the electrical activity of V-defects in GaN using scanning force microscopy
2009 · André Lochthofen, Wolfgang Mertin, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Works count: 74
Citation count: 1,008
H-index: 13
I10-index: 15
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