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Hiroshi Arimoto
Observed names:
H. ARIMOTO,
H. Arimoto,
HIROSHI ARIMOTO,
Hiroshi ARIMOTO,
Hiroshi Arimoto Hiroshi Arimoto
Institution:
National Institute of Advanced Industrial Science and Technology
Observed institutions:
Fujitsu (Japan),
Semiconductor Leading Edge Technologies, Inc (Japan),
Fujitsu Semiconductor (Japan),
National Institute of Advanced Industrial Science and Technology
OpenAlex ID:
A5109216637
GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
1984
·
Akira Takamori
, Eizo Miyauchi
, et al.
·
Japanese Journal of Applied Physics
·
47
PDF
Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography
2001
·
Morimi Osawa
, Kimitoshi Takahashi
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
46
Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs
1986
·
Eizo Miyauchi
, Tetsuo Morita
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
·
45
Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs
2006
·
H. Fukutome
, Y. Momiyama
, et al.
·
IEEE Transactions on Electron Devices
·
42
Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source
1983
·
Eizo Miyauchi
, Hiroshi Arimoto
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
·
41
Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
1985
·
Akira Takamori
, Eizo Miyauchi
, et al.
·
Japanese Journal of Applied Physics
·
33
PDF
Focused Si Ion Implantation in GaAs
1983
·
Yasuo Bamba
, Eizo Miyauchi
, et al.
·
Japanese Journal of Applied Physics
·
33
PDF
Charge build-up in Si-processing plasma caused by electron shading effect
1996
·
T. Kamata
, H. Arimoto
·
Journal of Applied Physics
·
30
A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors
1983
·
Eizo Miyauchi
, Hiroshi Arimoto
, et al.
·
Japanese Journal of Applied Physics
·
28
PDF
Reduced Damage Generation in GaAs Implanted with Focused Be Ions
1984
·
Yasuo Bamba
, Eizo Miyauchi
, et al.
·
Japanese Journal of Applied Physics
·
25
PDF
Flatband voltage shift in PMOS devices caused by carrier activation in p+-polycrystalline silicon and by boron penetration
2002
·
T.A. Aoyama
, K. Suzuki
, et al.
·
IEEE Transactions on Electron Devices
·
24
Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy
2004
·
Hidenobu Fukutome
, Hiroshi Arimoto
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
17
I n s i t u two-dimensional electron gas fabrication by focused Si ion beam implantation and molecular beam epitaxy overgrowth
1991
·
H. Arimoto
, A. Kawano
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
17
Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
1985
·
Yasuo Bamba
, Eizo Miyauchi
, et al.
·
Japanese Journal of Applied Physics
·
17
Novel Method for Measuring Intensity Distribution of Focused Ion Beams
1983
·
Hiroshi Arimoto
, Akira Takamori
, et al.
·
Japanese Journal of Applied Physics
·
17
Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
1983
·
Eizo Miyauchi
, Hiroshi Arimoto
, et al.
·
Japanese Journal of Applied Physics
·
17
Correction for local flare effects approximated with double Gaussian profile in ArF lithography
2003
·
Morimi Osawa
, Teruyoshi Yao
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
15
Pd–Ni–Si–Be–B Liquid Metal Ion Source for Maskless Ion Implantation
1984
·
Hiroshi Arimoto
, Akira Takamori
, et al.
·
Japanese Journal of Applied Physics
·
14
Direct evaluation of gate line edge roughness impact on extension profiles in sub-50mn N-MOSFETs
2005
·
H. Fukutome
, Y. Momiyarna
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
13
Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetration
2002
·
T. Aoyama
, K. Suzuki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
13
On the mechanism of energy distribution in liquid metal ion sources
1988
·
Masanori Komuro
, Hiroshi Arimoto
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
·
13
Highly Accurate Proximity Effect Correction for 100 kV Electron Projection Lithography
2005
·
Fumihiro Koba
, Hiroshi Yamashita
, et al.
·
Japanese Journal of Applied Physics
·
12
Visualization of the depleted layer in nanoscaled pn junctions on Si(001) surfaces with the use of scanning tunneling microscopy
1999
·
Hidenobu Fukutome
, Shigehiko Hasegawa
, et al.
·
Applied Surface Science
·
12
Picosecond excitonic absorption recovery of 100 nm GaAs/AlGaAs narrow multiple quantum-well wires
1991
·
Atsushi Tackeuchi
, Hideki Kitada
, et al.
·
Applied Physics Letters
·
12
Formation of submicron isolation in GaAs by implanting a focused boron ion beam emitted from a Pd–Ni–Si–Be–B LM ion source
1985
·
H. Arimoto
, A. Takamori
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
·
12
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Works count:
144
Citation count:
962
H-index:
16
I10-index:
31
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