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M. Balakrishnan

Observed names: Balakrishnan, M., M Balakrishnan, Muralikrishnan Balakrishnan
ORCID: 0000-0001-9164-3068
Observed ORCID: 0000-0001-9164-3068
OpenAlex ID: A5109246103
A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte
2006 · M.N. Kozicki, C. Gopalan, et al. · IEEE Transactions on Nanotechnology · 220
NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads
2023 · N. Ramaswamy, A. Calderoni, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 153
Information storage using nanoscale electrodeposition of metal in solid electrolytes
2003 · M.N Kozicki, M Mitkova, et al. · Superlattices and Microstructures · 117
Nonvolatile memory based on solid electrolytes
2005 · M.N. Kozicki, C. Gopalan, et al. · IEEE Computational Systems Bioinformatics Conference (CSB) · 105
Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes
2006 · M.N. Kozicki, M. Balakrishnan, et al. · Non-Volatile Memory Technology Symposium · 104
A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide
2006 · Muralikrishnan Balakrishnan, Sarath Chandran Puthen Thermadam, et al. · Non-Volatile Memory Technology Symposium · 22
Germanium sulfide-based solid electrolytes for non-volatile memory
2005 · M. Balakrishnan, M.N. Kozicki, et al. · Conference digest · 16
Voltage Reduction (1.4V) and Array Scaling (41nm) of Ferroelectric NVDRAM for Low-Power and High-Density Applications
2025 · A. Calderoni, A. Chavan, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 12
Enhancing thermoelectric performance of nanostructured Mg/Bi co-doped GeTe materials through optimized carrier concentration and phonon engineering
2025 · A. Sampathu, M. Sivakumar, et al. · Materials Science in Semiconductor Processing · 4
Structural Study of Cu Photodoped Ge-S Glasses
2007 · Balakrishnan, M., Kozicki, M. N., et al. · Scholar Works (Boise State University) · 4
A LowPowerNon-Volatile MemoryElement BasedonCopperinDeposited Silicon Oxide
2006 · M. Balakrishnan, Sarath Chandran, et al.
Germanium sulfide-based solid electrolytes for non-volatile memory
2006 · M. Balakrishnan · PhDT
Works count: 12
Citation count: 757
H-index: 8
I10-index: 8
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