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T. Endoh

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
2019 · H. Honjo, T. V. A. Nguyen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 85
10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
2015 · H. Honjo, T. Tanigawa, et al. · Symposium on VLSI Technology · 30
Low write power and Field-free sub-ns write speed SOT-MRAM cell with Design Technology of Canted SOT structure and Magnetic Anisotropy for NVM
2025 · T. V. A. Nguyen, H. Naganuma, et al. · IEEE International Memory Workshop (IMW) · 4
Highly Scalable 3-D Vertical FG NAND Cell Arrays Using the Sidewall Control Pillar (SCP)
2012 · Moon-Sik Seo, Jong-Moo Choi, et al. · IEEE International Memory Workshop (IMW) · 4
A high efficient and compact charge pump with multi-pillar vertical MOSFET
2012 · Hyoungjun Na, T. Endoh · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 3
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
2022 · K. Watanabe, T. Shimada, et al. · IEEE International Reliability Physics Symposium proceedings · 2
New Model of Switching Delay Induced by Modulation Effect of Damping and STT Pumping Balance with Programing Current and Interference Phenomena in p-MTJ Array
2016 · S. Ohuchida, K. Ito, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
2017 · T. Sasaki, T. Endoh · International Conference on Solid State Devices and Materials (SSDM)
Highly Efficient and Compact CMOS DC-DC Converter with Novel Transistor Layout of 60 nm Multi-pillar Type Vertical Body Channel MOSFET
2017 · K. Itoh, T. Endoh · International Conference on Solid State Devices and Materials (SSDM)
Novel Integrated Voltage Regulators with High-Side NMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement
2016 · K. Itoh, M. Muraguchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Study about the Ion Beam Etching (IBE) Process for the High Density Spintronic Devices and its Damage Recovery by the Oxygen Showering Post-treatment (OSP)
2016 · J. Jeong, T. Endoh · International Conference on Solid State Devices and Materials (SSDM)
Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices
2015 · J. H. Jeong, T. Endoh · International Conference on Solid State Devices and Materials (SSDM)
LLG Micromagnetic Simulation on STT Efficiency of sub 30nm Perpendicular MTJs with etching damage
2014 · K. Ito, S. Ohuchida, et al. · International Conference on Solid State Devices and Materials (SSDM)
A Compact Nonvolatile Logic Element Using an MTJ/MOS-Hybrid Structure
2011 · D. Suzuki, M. Natsui, et al. · International Conference on Solid State Devices and Materials (SSDM)
Collective Tunneling Model in Charge Trap Type NVM Cell
2010 · M. Muraguchi, Y. Sakurai, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 15
Citation count: 130
H-index: 4
I10-index: 2
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