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P. Modak

Observed name: P Modak
OpenAlex ID: A5109629711
Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures
1999 · S. Hardikar, M.K. Hudait, et al. · Applied Physics A · 84
Si incorporation and Burstein–Moss shift in n-type GaAs
1999 · M.K Hudait, P Modak, et al. · Materials Science and Engineering B · 47
Photoluminescence studies on Si-doped GaAs/Ge
1998 · M. K. Hudait, P. Modak, et al. · Journal of Applied Physics · 30
High d/gamma values in diode laser structures for very high power
2009 · I. B. Petrescu-Prahova, P. Modak, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 24
Low temperature photoluminescence properties of Zn-doped GaAs
1998 · M.K. Hudait, P. Modak, et al. · Materials Science and Engineering B · 20
Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1−xPx
2005 · N. H. Kim, P. Ramamurthy, et al. · Journal of Applied Physics · 17
Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates
1998 · M.K. Hudait, P. Modak, et al. · Materials Science and Engineering B · 17
High-efficiency thin-film light-emitting diodesat 650 nm
2001 · C. Rooman, R. Windisch, et al. · Electronics Letters · 13
AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
2000 · P. Modak, M. D'Hondt, et al. · IEEE Photonics Technology Letters · 13
(Al)GaInP multiquantum well LEDs on GaAs and Ge
2000 · P. Modak, M. D’Hondt, et al. · Journal of Electronic Materials · 13
253 mW/μm maximum power density from 9xx nm epitaxial laser structures with d/Γ greater than 1 μm
2008 · I. B. Petrescu-Prahova, P. Modak, et al. · IEEE International Semiconductor Laser Conference (ISLC) · 9
5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates
2001 · P. Modak, M. D'Hondt, et al. · Electronics Letters · 4
InAlGaP microcavity LEDs on Ge-substrates
2000 · P Modak, D Delbeke, et al. · Journal of Crystal Growth · 3
Characteristics of InGaAs quantum dots grown on tensile-strained GaAs/sub 1-x/P/sub x/
2004 · N.H. Kim, P. Ramamurthy, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 1
Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films
2002 · M.K. Hudait, P. Modak, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · 1
Structural and electrical properties of undoped GaAs grown by MOCVD
2002 · P. Modak, M. Kumar Hudait, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · 1
Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD
1998 · Mantu K. Hudait, P. Modak, et al. · NOT FOUND REPOSITORY (Indian Institute of Science Bangalore)
MOCVD epitaxy of GaAs/Ge heterostructures
1998 · S. B. Krupanidhi, Mantu K. Hudait, et al. · NOT FOUND REPOSITORY (Indian Institute of Science Bangalore)
Works count: 18
Citation count: 297
H-index: 10
I10-index: 10
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