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G S Khoo

Observed names: G. S. Khoo, G.S. Khoo, G.S. khoo
OpenAlex ID: A5109815032
Interstitial hydrogen in crystalline germanium
1987 · G S Khoo, C K Ong · Journal of Physics C Solid State Physics · 26
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Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces
1992 · N. Itoh, K. Hattori, et al. · Applied Physics Letters · 23
Relaxation and bond breaking at defect sites on GaP (110) surfaces by phonon-assisted multihole localization
1993 · G. S. Khoo, C. K. Ong, et al. · Physical review. B, Condensed matter · 22
CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface
1991 · C.K. Ong, G.S. Khoo, et al. · Surface Science · 17
The nature of the charged-self-interstitial in silicon
1987 · G S Khoo, C K Ong · Journal of Physics C Solid State Physics · 16
The migration of self-interstitials in germanium
1990 · G.S. Khoo, C.K. Ong · Journal of Physics and Chemistry of Solids · 14
Chemisorption of Cl on the Si(100)-2×1 surface
1995 · G. S. Khoo, C. K. Ong · Physical review. B, Condensed matter · 13
The multi-hole localization mechanism for particle emission from semiconductor surfaces
1993 · G S Khoo, C K Ong, et al. · Journal of Physics Condensed Matter · 13
The nature of the hydrogen-boron complex of crystalline Si
1991 · C K Ong, G S Khoo · Journal of Physics Condensed Matter · 13
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Models for two intense Si-H infrared stretching bands in FZ-Si grown in hydrogen
1987 · C K Ong, G S Khoo · Journal of Physics C Solid State Physics · 12
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Characteristics of potassium diffusion and adsorption on perfect and stepped GaAs(110) surfaces
1993 · G S Khoo, C K Ong · Journal of Physics Condensed Matter · 10
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Defect processes in GaP: Implications for the behavior of excited surface defects
1993 · G. S. Khoo, C. K. Ong · Physical review. B, Condensed matter · 10
Theoretical studies of halogen–semiconductor-surface interactions: The Cl/GaAs(110) system
1994 · G. S. Khoo, C. K. Ong · Physical review. B, Condensed matter · 9
The interstitial hydrogen atom in gallium phosphide
1991 · K F Wong, G S Khoo, et al. · Journal of Physics Condensed Matter · 9
The interactions of metallic and semiconducting adsorbates with Si(100)
1994 · G S Khoo, C K Ong · Journal of Physics Condensed Matter · 8
Energies for atomic emissions from defect sites on the Si surfaces: The effects of halogen adsorbates
1994 · G. S. Khoo, C. K. Ong, et al. · Journal of Applied Physics · 8
Modeled microscopic structures of monatomic and diatomic Al on stepped and unstepped GaP(110) surfaces
1993 · G. S. Khoo, C. K. Ong · Physical review. B, Condensed matter · 6
Formation of Br-terminated Si6 rings during etching of Si(111)-7 × 7
1995 · R.J. Pechman, T. Moriwaki, et al. · Surface Science · 5
O-in GaP: a negative-U centre
1993 · G S Khoo, C K Ong · Journal of Physics Condensed Matter · 5
The nature of the hydrogen-phosphorus system in crystalline Si
1991 · G S Khoo, C K Ong · Journal of Physics Condensed Matter · 5
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H-induced passivation of GaAs(110)-Be surface-acceptor systems
1993 · G. S. Khoo, C. K. Ong · Physical review. B, Condensed matter · 4
Bond breaking of adatoms on Si surfaces by electronic excitation
1995 · G S Khoo, N Itoh, et al. · Journal of Physics Condensed Matter · 3
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Hydrogen passivation of aluminium atoms in crystalline silicon
1991 · L S Chia, N K Goh, et al. · Journal of Physics Condensed Matter · 3
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Determination of CNDO parameters for germanium and their application to simple germanium molecules
1988 · C.K. ong, G.S. khoo · Journal of Physics and Chemistry of Solids · 3
CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface
1991 · C.K. Ong, G.S. Khoo, et al. · Surface Science Letters · 2
Works count: 28
Citation count: 259
H-index: 10
I10-index: 12
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