Get started
Author

L.G. McCray

Observed name: L. G. McCray
Observed institution: HRL Laboratories (United States)
OpenAlex ID: A5110454424
Structural and electrical properties of low temperature GaInAs
1993 · R. A. Metzger, A. S. Brown, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 49
Growth and characterization of low temperature AlInAs
1991 · R.A. Metzger, A.S. Brown, et al. · Journal of Crystal Growth · 23
Confinement of high Be doping levels in AlInAs/GaInAs npn heterojunction bipolar transistors by low temperature molecular-beam epitaxial growth
1993 · R. A. Metzger, M. Hafizi, et al. · Applied Physics Letters · 22
Be diffusion at the emitter-base junction of graded AlInAs/GaInAs heterojunction bipolar transistors
1992 · R. A. Metzger, M. Hafizi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 18
Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs
2002 · W.E. Stanchina, R.A. Metzger, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 14
Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications
1989 · M.J. Delaney, C.S. Chou, et al. · IEEE Electron Device Letters · 13
36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology
2005 · J.F. Jensen, W.E. Stanchina, et al. · Conference digest · 12
48 GHz AlInAs/GaInAs heterojunction bipolar transistors
2003 · U.K. Mishra, J.F. Jensen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Control of Be diffusion in AlInAs/GaInAs heterostructure bipolar transistors through use of low-temperature GaInAs
1992 · R. A. Metzger, T. Liu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
X-ray and photoluminescence characterization of low temperature AlInAs grown by molecular beam epitaxy
1992 · R. A. Metzger, L. G. McCray · Applied Physics Letters · 3
6-GHz AlInAs/GaInAs/InP DHBT's grown by MOVPE+MBE
1991 · W.E. Stanchina, R.A. Metzger, et al. · IEEE Transactions on Electron Devices · 3
60 Ghz A l InAs/gainas/inp Dhbts Grown by Movpe+mbe
2005 · W.E. Stanchina, R.A. Metzger, et al. · Conference digest · 2
36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology
1991 · J.F. Jensen, W.E. Stanchina, et al. · IEEE Transactions on Electron Devices · 2
GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology
1989 · M.J. Delaney, C.S. Chou, et al. · Custom Integrated Circuits Conference · 2
The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs
1991 · R. A. Metzger, A. S. Brown, et al. · MRS Proceedings · 1
GaAs MESFET Digital Integrated C ircuits Fabricated with Low TemDerature Buffer Technology
1989 · M.J. Delaney, C.S. Chou, et al.
Works count: 16
Citation count: 181
H-index: 8
I10-index: 8
Year
Topic
Type