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E.Y. Lin

Accurate model including Coulomb-enhanced and Urbach-broadened absorption spectrum of direct-gap semiconductors
2007 · E. Y. Lin, T. S. Lay, et al. · Journal of Applied Physics · 10
Modulation spectroscopy on metamorphic InAs quantum dots
2010 · E.Y. Lin, C.Y. Chen, et al. · Physica E Low-dimensional Systems and Nanostructures · 8
Argon plasma induced photoluminescence enhancement and quantum well intermixing of InGaAs/InGaAlAs multiple quantum wells
2008 · C.L. Chiu, E.Y. Lin, et al. · Physica B Condensed Matter · 4
Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a ‐plane GaN
2008 · E. Y. Lin, C. Y. Chen, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Modulation-Doped InGaAlAs/InP Semiconductor Optical Amplifier Structures Grown by Molecular Beam Epitaxy
2006 · David J. Feng, C. L. Chiu, et al. · Japanese Journal of Applied Physics · 4
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Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN
2010 · E.Y. Lin, C.Y. Chen, et al. · Physica B Condensed Matter · 3
A band-to-band Coulomb interaction model for refractive index spectra of ternary semiconductors
2009 · E. Y. Lin, T. S. Lay · Journal of Applied Physics · 3
InGaAs quantum dots embedded in DBR-coupled double cavity
2010 · T.E. Tzeng, K.Y. Chuang, et al. · Journal of Crystal Growth · 2
Empirical model including band-to-band Coulomb interaction for refractive index spectra of quaternary semiconductors
2010 · E.Y. Lin, T. S. Lay · OECC 2010 Technical Digest · 2
Blue-shift emission in InP-based quantum dots by SiO2 sputtering and rapid thermal annealing
2008 · T.C. Hsu, T.E. Tzeng, et al. · Journal of Crystal Growth · 1
Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction
2007 · E. Y. Lin, T. S. Lay, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 1
Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy
2005 · T.S. Lay, E.Y. Lin, et al. · Journal of Crystal Growth · 1
340nm blue-shift in InGaAs/InAlAs quantum dots processed by SiO2 sputtering and rapid thermal annealing
2008 · T. C. Hsu, T. E. Tzeng, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Quantum Well Intermixing in InGaAs/InGaAlAs Structures by Using ICP-RIE and SiO2 Sputtering
2007 · H. J. Chang, E. Y. Lin, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Improved modeling ofCoulomb-enhanced andUrbach-broadened absorption edgeofdirect-gap semiconductors forband-parameter extraction
2007 · E.Y. Lin, T. S. Lay, et al.
Broad and Flat Emission Spectrum from InGaAs/InGaAlAs Asymmetric Multiple Quantum Wells: Effect of Well-width and Modulation-Doping Profiles
2006 · C.Y. Chen, C.F. Liang, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
A Band-to-Band Coulomb Interaction Model for Refractive Indices of AlxGa1-xAs and InGaAs Ternary Materials at Photon Energies Near and Above the Band-Gap
2006 · E.Y. Lin, T.S. Lay, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Empirical model including band‐to‐band Coulomb interaction for refractive indices of GaAs and InP‐based materials at photon energies near and above the band‐gap
2006 · E. Y. Lin, T. S. Lay, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Effect of well width and modulation‐doping distributions on spectral characteristics for asymmetric multiple quantum wells
2006 · C. Y. Chen, G. J. Din, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Modulation-doped Asymmetric Multi-Quantum-Well Structures for Flat Broadband Gain Spectrum
2006 · C.Y. Chen, J.Y. Feng, et al.
Empirical formulas including Coulomb interaction for refractive indices of GaAs and InP-based materials at photon energies near and above the bandgap
2006 · E.Y. Lin, T.S. Lay, et al.
Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy
2005 · T.S. Lay, P.P. Shen, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
An empirical modeling for reftactive indices of InP-based quaternary compounds at photon energy near and above the bandgap
2005 · T.S. Lay, E.Y. Lin, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Empirical formulas for refractive indices of InP based materials near and above the band gap
2004 · E.Y. Lin, T.S. Lay, et al.
Works count: 24
Citation count: 43
H-index: 4
I10-index: 1
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