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M. Raja

Observed names: M Raja, Muthusamy Raja
OpenAlex ID: A5110645003
Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P–N junction diode application
2015 · M. Balaji, J. Chandrasekaran, et al. · Materials Science in Semiconductor Processing · 129
Preparation and Characterization Studies of Nanostructured CdO Thin Films by SILAR Method for Photocatalytic Applications
2017 · A. Shameem, P. Devendran, et al. · Journal of Inorganic and Organometallic Polymers and Materials · 87
Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode
2016 · M. Raja, J. Chandrasekaran, et al. · Materials Science in Semiconductor Processing · 64
Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes
2017 · R. Marnadu, J. Chandrasekaran, et al. · Journal of Materials Science Materials in Electronics · 59
Influence of metal work function and incorporation of Sr atom on WO 3 thin films for MIS and MIM structured SBDs
2018 · R. Marnadu, J. Chandrasekaran, et al. · Superlattices and Microstructures · 58
Structural, optical and electrical properties of Ru doped MoO3 thin films and its P–N diode application by JNS pyrolysis technique
2016 · M. Balaji, J. Chandrasekaran, et al. · Journal of Materials Science Materials in Electronics · 53
Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes
2020 · K. Sasikumar, R. Bharathikannan, et al. · Superlattices and Microstructures · 43
Investigation of microstructural, optical and dc electrical properties of spin coated Al:WO3 thin films for n-Al:WO3/p-Si heterojunction diodes
2017 · M. Raja, J. Chandrasekaran, et al. · Optik · 34
Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes
2018 · K. Sasikumar, R. Bharathikannan, et al. · Silicon · 33
Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique
2020 · M. Balaji, J. Chandrasekaran, et al. · Applied Physics A · 27
Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application
2020 · K. Ravikumar, S. Agilan, et al. · Physica B Condensed Matter · 26
Evaluation of microstructural and electrical properties of WO3-x thin films for p-Si/n-WO3-x/Ag junction diodes
2016 · M. Raja, J. Chandrasekaran, et al. · Optik · 24
The Structural, Optical and Electrical Properties of Spin Coated WO 3 Thin Films Using Organic Acids
2016 · M. Raja, J. Chandrasekaran, et al. · Silicon · 20
Impact of Cu concentration on the properties of spray coated Cu-MoO3thin films: evaluation of n-CuMoO3/p-Si junction diodes by J-V, Norde and Cheung’s methods
2019 · M Balaji, J Chandrasekaran, et al. · Materials Research Express · 16
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Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes
2019 · K. Sasikumar, R. Bharathikannan, et al. · Journal of Inorganic and Organometallic Polymers and Materials · 16
A critical review on decade progress and future prospects of P3HT:PCBM bulk heterojunction solar cells
2025 · Babu Balraj, M. Raja, et al. · Solar Energy · 15
Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes
2020 · M. Raja, J. Chandrasekaran, et al. · Journal of Sol-Gel Science and Technology · 14
Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes
2018 · K. Ravikumar, S. Agilan, et al. · Silicon · 14
Morphological and optical evolution of different organic acids used MoO3 thin films by spin coating method
2016 · M. Balaji, J. Chandrasekaran, et al. · Optik · 13
Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique
2016 · M. Balaji, J. Chandrasekaran, et al. · Zeitschrift für Physikalische Chemie · 11
Fabrication and characterization of novel Ga-doped WO3 films and n-Ga@WO3/p-Si junction diode for optoelectronic device applications
2022 · M. Raja, R. Marnadu, et al. · Inorganic Chemistry Communications · 7
Design and fabrication of Al/Sr:SnO2/p-Si schottky barrier diode based on strontium-doped SnO2 thin film
2018 · K Ravikumar, S Agilan, et al. · Materials Research Express · 4
A facile sol–gel spin-coating fabrication of Ni@WO3 thin films and highly rectifying p-Si/n-Ni@WO3 heterojunction for optoelectronic applications
2021 · M. Raja, J. Chandrasekaran, et al. · Journal of Materials Science Materials in Electronics · 2
A Review on Green Synthesis of Magnetic Nanoparticles: Unlocking Catalytic Potential for Environmental Sustainability
2023 · Babu Balraj, Mohanbabu B, et al. · NanoNEXT · 1
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Mixed-Valence MnO/Mn3O4/rGO composites with PVA/KOH/K4[Fe(CN)6]/K3[Fe(CN)6] gel polymer electrolyte for asymmetric supercapacitor applications
2026 · S. Dhanajeyan, P. Suriakala, et al. · Journal of Physics and Chemistry of Solids
Works count: 27
Citation count: 770
H-index: 15
I10-index: 20
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