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Hervé Dumont

Pyrolysis pathways and kinetics of thermal decomposition of diethylzinc and diethyltellurium studied by mass spectrometry
1993 · Hervé Dumont, Alain Marbeuf, et al. · Journal of Materials Chemistry · 46
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
2006 · Philippe Rodriguez, Laurent Auvray, et al. · Journal of Crystal Growth · 32
Growth and characterization of high quality BxGa1−xAs/GaAs(001) epilayers
2002 · H. Dumont, J. Dazord, et al. · Journal of Crystal Growth · 31
Photo-assisted growth of ZnTe by metalorganic chemical vapour deposition
1993 · Hervé Dumont, Jean-Eric Bourée, et al. · Journal of Crystal Growth · 30
Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy
2003 · H. Dumont, D. Rutzinger, et al. · Applied Physics Letters · 29
Mass-spectrometric study of thermal decomposition of diethylzinc and diethyltellurium
1992 · Hervé Dumont, Alain Marbeuf, et al. · Journal of Materials Chemistry · 24
Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
2002 · F Saidi, F Hassen, et al. · Materials Science and Engineering C · 23
The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties
1995 · W.S. Kuhn, A. Lusson, et al. · Progress in Crystal Growth and Characterization of Materials · 22
Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures
2003 · H Dumont, L Auvray, et al. · Optical Materials · 20
Deposition and characterization of BN/Si(0 0 1) using tris(dimethylamino)borane
2002 · Hervé Dumont, Béatrice Bayle, et al. · Materials Research Bulletin · 16
AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE
2000 · L. Auvray, H. Dumont, et al. · Journal of Crystal Growth · 14
Optical study of BxGa1−xAs/GaAs epilayers
2005 · F. Saidi, F. Hassen, et al. · Materials Science and Engineering C · 13
Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate
2013 · K. Naji, G. Saint-Girons, et al. · Applied Physics Letters · 11
Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part I: Analysis of BAs thermodynamic properties
2006 · H. Dumont, Y. Monteil · Journal of Crystal Growth · 11
Analysis of nitrogen incorporation mechanisms in GaAs1−xNx/GaAs epilayers grown by MOVPE
2001 · Hervé Dumont, Laurent Auvray, et al. · Materials Science and Engineering B · 11
Growth kinetics during metal-organic chemical vapour deposition of ZnTe
1993 · H. Dumont, A. Marbeuf, et al. · Materials Science and Engineering B · 11
MOVPE growth of GaAsN: surface study by AFM and optical properties
2000 · L. Auvray, H. Dumont, et al. · Materials Science in Semiconductor Processing · 10
Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images
1997 · V. Thévenot, V. Souliere, et al. · Journal of Crystal Growth · 10
Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy
2002 · H. Dumont, L. Auvray, et al. · Applied Physics Letters · 9
Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
2011 · K. Naji, H. Dumont, et al. · Journal of Crystal Growth · 8
InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates
2011 · C. Bru-Chevallier, A. El Akra, et al. · Journal of Nanoscience and Nanotechnology · 8
Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
2000 · H Dumont, Y Monteil, et al. · Applied Surface Science · 7
Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
1999 · H Dumont, L Auvray, et al. · Journal of Crystal Growth · 7
Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
1999 · H. Dumont, L. Auvray, et al. · Journal of Crystal Growth · 7
Comparative optical study of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers
2004 · F. Saidi, F. Hassen, et al. · IEE Proceedings - Optoelectronics · 6
Works count: 72
Citation count: 489
H-index: 12
I10-index: 18
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