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Sébastien Martinie

Further Insights in TFET Operation
2014 · Anthony Villalon, Gilles Le Carval, et al. · IEEE Transactions on Electron Devices · 68
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description
2015 · Thierry Poiroux, O. Rozeau, et al. · IEEE Transactions on Electron Devices · 67
Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM
2012 · Sebastien Martinie, Jean-Luc Autran, et al. · IEEE Transactions on Nuclear Science · 27
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
2016 · Léo Bourdet, Jing Li, et al. · Journal of Applied Physics · 26
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A comprehensive model on field-effect pnpn devices (Z 2 -FET)
2017 · Yuan Taur, Joris Lacord, et al. · Solid-State Electronics · 24
Insight into carrier lifetime impact on band-modulation devices
2017 · Mukta Singh Parihar, Kyung Hwa Lee, et al. · Solid-State Electronics · 20
Low-Power Z2-FET Capacitorless 1T-DRAM
2017 · Mukta Singh Parihar, Kyung Hwa Lee, et al. · IEEE International Memory Workshop (IMW) · 18
Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation
2009 · SÉbastien Martinie, Daniela Munteanu, et al. · IEEE Transactions on Electron Devices · 14
Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level
2011 · Sebastien Martinie, Jean-Luc Autran, et al. · IEEE Transactions on Nuclear Science · 13
(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities
2016 · Loïc Gaben, Sylvain Barraud, et al. · ECS Transactions · 12
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New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport
2008 · SÉbastien Martinie, Daniela Munteanu, et al. · IEEE Electron Device Letters · 12
Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account
2019 · Neil Rostand, Sebastien Martinie, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 9
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Innovative tunnel FET architectures
2018 · Carlos Diaz Llorente, Sebastien Martinie, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 9
Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part I
2016 · Julien Borrel, Louis Hutin, et al. · IEEE Transactions on Electron Devices · 9
Compact Modelling of Single Event Transient in Bulk MOSFET for SPICE: Application to Elementary Circuit
2018 · Neil Rostand, Sebastien Martinie, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 7
Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics
2016 · Louis Hutin, Cyrille Le Royer, et al. · IEEE Transactions on Electron Devices · 7
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation
2021 · Sébastien Martinie, Joris Lacord, et al. · Solid-State Electronics · 6
Impact of carrier lifetime on Z2-FET operation
2017 · Mukta Singh Parihar, Kyung Hwa Lee, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 6
TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction
2010 · Marie-Anne Jaud, Pascal Scheiblin, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
New physical insight for analog application in PSP bulk compact model
2018 · Sebastien Martinie, Olivier Rozeau, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 5
Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part II
2016 · Julien Borrel, Louis Hutin, et al. · IEEE Transactions on Electron Devices · 5
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A Review of Sharp-Switching Band-Modulation Devices
2021 · Sorin Cristoloveanu, Joris Lacord, et al. · Micromachines · 4
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L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology
2020 · Sebastien Martinie, Olivier Rozeau, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 4
Robust SPICE Model for FeCap: Application to 16kbit 1T-1C FeRAM Array Simulation
2025 · Sébastien Martinie, Olivier Billoint, et al. · International Compact Modeling Conference (ICMC) · 3
Cryogenic L-UTSOI model for 22nm pMOS FD-SOI, including stress effects
2024 · Miltiadis Alepidis, Sylvie Jarjayes, et al. · 3
Works count: 53
Citation count: 396
H-index: 11
I10-index: 11
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