Author

W. Noble

Observed names: W. P. Noble, W.P. Noble, Wendell P. Noble

Institution: IBM (United States)

Observed institution: IBM (United States)

OpenAlex ID: A5110868410

A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

2003 · B. Davari, C. Koburger, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 56

A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

1986 · N.C. Lu, P.E. Cottrell, et al. · IEEE Journal of Solid-State Circuits · 54

The evolution of IBM CMOS DRAM technology

1995 · E. Adler, J. K. DeBrosse, et al. · IBM Journal of Research and Development · 53

A model for anomalous short-channel behavior in submicron MOSFETs

1993 · H.I. Hanafi, W.P. Noble, et al. · IEEE Electron Device Letters · 45

The effects of gate field on the leakage characteristics of heavily doped junctions

1989 · W.P. Noble, S.H. Voldman, et al. · IEEE Transactions on Electron Devices · 38

Fundamental limitations on DRAM storage capacitors

1985 · Wendell P. Noble, William W. Walker · IEEE Circuits and Devices Magazine · 30

Narrow channel effects in insulated gate field effect transistors

1976 · W.P. Noble, P.E. Cottrell · Technical digest - International Electron Devices Meeting/Technical digest · 26

The SPT cell—A new substrate-plate trench cell for DRAMs

1985 · N. Lu, P. Cottrell, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20

Radiation resistant MOS devices

1968 · J. Lindmayer, W.P. Noble · IEEE Transactions on Electron Devices · 17

A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's

1992 · A. Bryant, B. El-Kareh, et al. · IEEE Transactions on Electron Devices · 15

Interaction of IGFET field design with narrow channel device operation

1980 · H. Kotecha, W. Noble · Technical digest - International Electron Devices Meeting/Technical digest · 15

Parasitic leakage in DRAM trench storage capacitor vertical gated diodes

1987 · W.P. Noble, A. Bryant, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14

IVB-4 vertical storage trench gated diode leakage

1987 · S.H. Voldman, A. Bryant, et al. · IEEE Transactions on Electron Devices · 11

Doping profile design for substrate hot carrier reliability in deep submicron field effect transistors

2002 · W.R. Tonti, W.P. Noble, et al. · IEEE International Reliability Physics Symposium proceedings · 9

A fundamental performance limit of optimized 3.3 V subquarter micron fully overlapped LDD MOSFETs

1990 · A. Bryant, B. El-Kareh, et al. · Symposium on VLSI Technology · 9

Short channel effects in dual gate field effect transistors

1978 · W.P. Noble · Technical digest - International Electron Devices Meeting/Technical digest · 9

Angled implant fully overlapped LDD (AI-FOLD) NFETs for performance and reliability

2003 · A. Bryant, T. Furukawa, et al. · IEEE International Reliability Physics Symposium proceedings · 4

Angled Implant Fully Overlapped LDD (AI-FOLD) NFETs for Performance and Reliability

1989 · A. Bryant, T. Furukawa, et al. · IEEE International Reliability Physics Symposium proceedings · 4

First Experimental Verification of Collection Length Limited Gate Induced Drain Leakage

1992 · Toshiki Mii, R. Kleinheiiz, et al. · 2

Radiation resistant MOS devices

1967 · J. Lindmayer, W.P. Noble · Technical digest - International Electron Devices Meeting/Technical digest · 1

Session 26 Integrated circuits — Nonvolatile and static memory technology

1986 · M. Gosney, W. Noble · Technical digest - International Electron Devices Meeting/Technical digest

Session 18 Integrated circuits — Modeling and analysis of MOS circuits

1985 · W. Noble, E. Cohen · Technical digest - International Electron Devices Meeting/Technical digest

Shared word line DRAM cell

1984 · R.E. Scheuerlein, W.W. Walker, et al. · IEEE Journal of Solid-State Circuits

Fundamental limitations on dram storage capacitors

1984 · W. P. Noble, W. W. Walker · AIP conference proceedings

Radiation-resistant MOS devices

1968 · J. Lindmayer, W.P. Noble · IEEE Transactions on Electron Devices

Works count: 25

Citation count: 432

H-index: 12

I10-index: 13