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Stanislav N. Knyazev

Observed names: S. N. Knyazev, S. N. Knyzev, S.N. Knyazev, Stanislav N. Knyzev, С. Н. Князев, С.Н. Князев
ORCID: 0000-0002-2580-1707
Observed ORCID: 0000-0002-2580-1707
OpenAlex ID: A5111026091
A new approach to the growth of langasite crystals
2002 · O.A. Buzanov, A.V. Naumov, et al. · Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) · 28
Magnetoplastic Effect in Te-Doped GaAs Single Crystals
2020 · T. G. Yugova, A. G. Belov, et al. · Crystallography Reports · 12
Methods of dislocation structure characterization in A IIIB V semiconductor single crystals
2022 · Stanislav N. Knyazev, Aleksandr V. Kudrya, et al. · Modern Electronic Materials · 10
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Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs
2020 · Tatyana G. Yugova, Aleksandr G. Belov, et al. · Modern Electronic Materials · 8
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Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
2021 · Tatyana G. Yugova, Aleksandr G. Belov, et al. · Modern Electronic Materials · 7
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Methods of dislocation structure characterization in AIIIBV semiconductor single crystals
2023 · S. N. Knyazev, A. V. Kudrya, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 6
Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method
2020 · A. A. Yugov, B. V. Pugachev, et al. · Crystallography Reports · 4
Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method
2022 · N. A. Sanjarovskii, I. B. Parfenteva, et al. · Crystallography Reports · 3
Магнитопластический эффект в монокристаллах GaAs, легированных теллуром
2020 · Т. Г. Югова, А. Г. Белов, et al. · Кристаллография · 3
Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates
2021 · S. S. Kormilitsina, E. V. Molodtsova, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 2
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Особенности формирования дислокационной структуры в монокристаллах арсенида галлия, полученных методом чохральского, "Кристаллография"
2017 · И. Б. Парфентьева, Б. В. Пугачев, et al. · Кристаллография · 2
Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method
2024 · T. G. Yugova, V. A. Chuprakov, et al. · Кристаллография · 1
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Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method
2022 · T. G. Yugova, V. A. Chuprakov, et al. · Crystallography Reports · 1
Comparison between optical and electrophysical data on free electron concentration in n-InAs samples
2021 · T. G. Yugova, A. G. Belov, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 1
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Comparison of the results of optical and electrophysical measurements of free electron density in n-GaAs samples doped with tellurium
2021 · T. G. Yugova, A. G. Belov, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 1
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Структурные особенности, связанные с двойникованием в процессе роста монокристаллов арсенида галлия методом Чохральского
2020 · А. А. Югов, Б. В. Пугачев, et al. · Кристаллография · 1
Study of the structure of a GaAs single crystal doped with tellurium by projection etching
2026 · D. A. Tikhonov, N. Yu. Komarovsky, et al. · Industrial laboratory Diagnostics of materials
Исследование Влияния Кристаллографической Ориентации Пластин Insb На Их Поверхностные Характеристики
2025 · Д.А. Тихонов, М.С. Нестюркин, et al. · Nanoindustry Russia
Estimation of dislocation density on GaAs plates using machine vision
2025 · R. A. Verbitsky, V. D. Latonov, et al. · Industrial laboratory Diagnostics of materials
Estimation of the Dislocation Density on GaAs Wafers Using Machine Vision
2025 · R. A. Verbitsky, V. D. Latonov, et al. · Inorganic Materials
Physical and Technological Causes of Channel Inhomogeneity in InSb Single Crystals Heavily Doped with Te
2024 · N. Yu. Komarovskiy, Yu. N. Parkhomenko, et al. · Russian Microelectronics
Analysis of Factors Influencing the Selective Etching of {100} Surface of Single-Crystal Gaas Usedto Determine the Dislocation Density
2024 · R. A. Verbitsky, K. S. Polzikova, et al. · Inorganic Materials Applied Research
Analysis of factors influencing the process of selective etching of the {100} monocrystalline GaAs surface to determine the dislocation density
2024 · Roman A. Verbitsky, Kristina S. Polzikova,, et al. · Industrial laboratory Diagnostics of materials
Defect structure of tin-doped inas single crystals grown by the Czochralski method
2024 · N. A. Sanjarovskii, I. B. Parfenteva, et al. · Кристаллография
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Physical and technological causes of channel inhomogeneity in InSb single crystals heavily doped with Te
2024 · N. Yu. Komarovskiy, Yu. N. Parkhomenko, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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Works count: 38
Citation count: 90
H-index: 6
I10-index: 3
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