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Seungmin Jo
Observed names:
S. B. Jo,
S.-B. Jo
Institution:
Soongsil University
Observed institutions:
Soongsil University,
Inha University
ORCID:
0009-0006-5454-4646
Observed ORCID:
0009-0006-5454-4646
OpenAlex ID:
A5111118146
Characterization of a modified Bosch-type process for silicon mold fabrication
2005
·
S.-B. Jo
, M.-W. Lee
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
38
Novel Form Birefringence Modeling for an Ultracompact Sensor in Porous Silicon Films Using Polarization Interferometry
2004
·
B. O
, C.-H. Choi
, et al.
·
IEEE Photonics Technology Letters
·
8
Suppression of interfacial layers in ZrO 2 /TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAM
2025
·
Hyeongjun Kim
, Juan Hong
, et al.
·
Materials Horizons
·
7
Atomic layer etching of ZrO2 thin films for DRAM capacitors using NF3 plasma and TiCl4
2025
·
Haram Yang
, Hyeongjun Kim
, et al.
·
Ceramics International
·
7
Improvement of the surface characteristics of sputtered metal layer for a MEMS micro-mirror switch
2003
·
M.-W. Lee
, S.-B. Jo
, et al.
·
Thin Solid Films
·
1
Self–Activating atomic layer deposition: A kinetic strategy for growth of metastable, high work function MoO2 thin films
2026
·
Hyun-June Park
, Kyu-Hwan Seok
, et al.
·
Applied Surface Science
Author response for "Suppression of Interfacial Layers in ZrO₂/TiN Capacitors by Atomic Layer Deposition Using Ligand-Engineered Zr Precursors for Scalable DRAM"
2025
·
Hyeongjun Kim
, Juan Hong
, et al.
·
Publons reviews and discussion
Author response for "Suppression of Interfacial Layers in ZrO₂/TiN Capacitors by Atomic Layer Deposition Using Ligand-Engineered Zr Precursors for Scalable DRAM"
2025
·
Hyeongjun Kim
, Juan Hong
, et al.
·
Publons reviews and discussion
Replication-based fabrication for an optical device that incorporates vertically curved structures
2006
·
M. W. Lee
, K. J. Lim
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
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Works count:
9
Citation count:
61
H-index:
4
I10-index:
1
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