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Author

Tianqi Weng

Observed names: T. Weng, T.H. Weng
ORCID: 0009-0004-9216-4308
Observed ORCID: 0009-0004-9216-4308
OpenAlex ID: A5111246194
Planar fully ion implanted InP power junction FET's
1984 · J.B. Boos, S.C. Binari, et al. · IEEE Electron Device Letters · 25
Fully ion implanted InP junction FET's
1982 · J.B. Boos, H.B. Dietrich, et al. · IEEE Electron Device Letters · 15
InP JFETs by shallow Zn diffusion
1983 · J.B. Boos, T.H. Weng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Dielectric constant of semi-insulating indium phosphide
1982 · R.E. Neidert, S.C. Binari, et al. · Electronics Letters · 13
Enhancement of critical current density and flux pinning force of MgB2 by Bi2212 addition
2025 · Lingkai Yuan, Tianqi Weng, et al. · Journal of Alloys and Compounds · 6
Two and three terminal planar InP TEDs
1980 · T. Weng, K.J. Sleger, et al. · IEEE Electron Device Letters · 5
Effect of sulfur doping on superconductivity and charge density wave order in Kagome metal CsV 3 (Sb 1−x S x ) 5
2024 · Fei Song, Chuan Ke, et al. · Superconductor Science and Technology · 4
I-V characteristics of MESFET's with nonuniform carrier distribution
1982 · T.H. Weng · IEEE Transactions on Electron Devices · 4
The characteristics of CdSxSe1-xthin-film transistors
1974 · T.H. Weng · Proceedings of the IEEE · 3
Significantly enhancing current carrying performance of MgB 2 superconductor with natural dopants carbon nanoparticles and rare earth elements derived from Dicranopteris pedata waste
2025 · Tianqi Weng, Lingkai Yuan, et al. · Superconductor Science and Technology · 2
Electrical properties of some thin-film semiconductor alloys
1971 · T.H. Weng · Proceedings of the IEEE · 2
Significant improvement of Jc and flux pinning force of MgB2 by doping NTE-ZrW2O8 particles
2025 · Tianqi Weng, Lingkai Yuan, et al. · Journal of Magnesium and Alloys · 1
A TaSi/sub 2/ masked and plasma etched self-aligned SOS FET
2002 · T.H. Weng · IEEE Hong Kong Electron Devices Meeting · 1
A comparative study of p-type diffusion in III-V compound semiconductors
2002 · T.H. Weng · IEEE Hong Kong Electron Devices Meeting · 1
A CdSe-CdTe thin-film transistor
1969 · T.H. Weng · Proceedings of the IEEE · 1
Fast-sweep capacitance-voltage plotter
1968 · E.J. Charlson, D.H. Hu, et al. · Proceedings of the IEEE · 1
Significant enhancement of current-carrying and pinning properties of MgB2 superconductors by FeGa alloys
2026 · Tianqi Weng, Zhiwei Wen, et al. · Journal of Alloys and Compounds
Critical phenomenon of Cu doping and its correlation with superconductivity suppression in FeSe0.4Te0.6 single crystals
2025 · Zhiwei Wen, Yongliang Chen, et al. · Superconductor Science and Technology
Author response for "Effect of sulfur doping on superconductivity and charge density wave order in Kagome metal CsV3(Sb1-xSx)5"
2024 · Fei Song, Chuan Ke, et al.
Author response for "Effect of sulfur doping on superconductivity and charge density wave order in Kagome metal CsV3(Sb1-xSx)5"
2024 · Fei Song, Chuan Ke, et al.
Calculation of I-V curves of a GaAs MESFET with nonuniform channel doping by means of numerical integration
2002 · T.H. Weng · IEEE Hong Kong Electron Devices Meeting
Numerical calculation of I-V characteristic curves of an ion implanted GaAs MESFET
2002 · T.H. Weng
Corrections to "Two and three terminal planar InP TEDs"
1980 · T. Weng, K.J. Sleger, et al. · IEEE Electron Device Letters
I-V characteristics of a thin-film transistor with graded channel thickness
1976 · T.H. Weng · Proceedings of the IEEE
Works count: 24
Citation count: 97
H-index: 5
I10-index: 4
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