Author

Shenao Nie

Institution: Hebei University of Technology

Observed institution: Hebei University of Technology

ORCID: 0009-0007-2379-0702

Observed ORCID: 0009-0007-2379-0702

OpenAlex ID: A5111345540

Effect of 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) on Cu/Ta chemical mechanical planarization (CMP) in the barrier layer: A novel complexing agent and the dual role on Cu

2024 · Ni Meng, Xianglong Zhang, et al. · Surfaces and Interfaces · 11

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

2024 · Xianglong Zhang, Xianghui Li, et al. · Materials Science in Semiconductor Processing · 9

Effect of 3-amino-1,2,4-triazole and triethylenetetramine on silicon backside thinning chemical mechanical polishing

2024 · Yuxuan Qiu, Shenao Nie, et al. · Materials Science in Semiconductor Processing · 7

Effect of picolinic acid and sorbitol in ceria-based slurry on shallow trench isolation chemical mechanical polishing

2024 · Shenao Nie, Xianghui Li, et al. · Colloids and Surfaces A Physicochemical and Engineering Aspects · 6

Effect of L-isoleucine on the Removal Rate Selectivity of SiO2/Si3N4 in Chemical Mechanical Polishing of Shallow Trench Isolation

2025 · Shenao Nie, Yuxuan Qiu, et al. · ECS Journal of Solid State Science and Technology · 2

Synergistic effect of PVA and FMEE on improving post-CMP surface uniformity for polysilicon and its mechanism

2025 · Yongkang Guo, Yanchao Ge, et al. · Materials Science in Semiconductor Processing · 1

Analysis of the effect of diethylenetriamine and 1,2-benzisothiazoline-3-one on the chemical mechanical polishing(CMP) of silicon layers in Silicon-on-Insulator(SOI) wafers

2025 · Yanchao Ge, Ying Wei, et al. · Materials chemistry and physics.

Works count: 7

Citation count: 36

H-index: 4

I10-index: 1