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H. Yoshida
Observed name:
H Yoshida
Institution:
Toshiba (Japan)
Observed institutions:
Toshiba (Japan),
Helmholtz-Zentrum Dresden-Rossendorf,
Himeji University
OpenAlex ID:
A5111434942
On-chip quantum interference between silicon photon-pair sources
2013
·
J. W. Silverstone
, D. Bonneau
, et al.
·
Nature Photonics
·
553
PDF
Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits
2012
·
D Bonneau
, E Engin
, et al.
·
New Journal of Physics
·
88
PDF
1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
2002
·
T. Akiyama
, N. Georgiev
, et al.
·
IEEE Photonics Technology Letters
·
73
Nonlinearity and recovery time of 1.55 µmintersubbandabsorption in InGaAs/AlAs/AlAsSb coupled quantum wells
2001
·
T. Akiyama
, N. Georgiev
, et al.
·
Electronics Letters
·
60
Ultrafast all-optical switching at 1.3µm/1.55 µm using novelInGaAs/AlAsSb/InP coupled double quantum well structure forintersubband transitions
1999
·
H. Yoshida
, T. Mozume
, et al.
·
Electronics Letters
·
52
Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure
1999
·
A. Neogi
, T. Mozume
, et al.
·
IEEE Photonics Technology Letters
·
47
Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well
1999
·
A Neogi
, H Yoshida
, et al.
·
Optics Communications
·
26
InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems
2003
·
T. Simoyama
, H. Yoshida
, et al.
·
IEEE Photonics Technology Letters
·
24
Intersubband absorption saturation in InGaAs-AlAsSb quantum wells
2002
·
A.V. Gopal
, H. Yoshida
, et al.
·
IEEE Journal of Quantum Electronics
·
23
Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells
2000
·
A. Neogi
, H. Yoshida
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
22
Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures
2001
·
A. Neogi
, H. Yoshida
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
21
Ultrafast all-optical NOR gate based on intersubband and interband transitions
2005
·
M. Naruse
, H. Yoshida
, et al.
·
IEEE Photonics Technology Letters
·
15
Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
2001
·
T Mozume
, N Georgiev
, et al.
·
Journal of Crystal Growth
·
15
Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells
1999
·
A. Neogi
, H. Yoshida
, et al.
·
Journal of Applied Physics
·
13
Thermal behavior of deep levels correlated with iron in silicon metal-oxide-semiconductor structure
1995
·
S. Kishino
, S. Iwamoto
, et al.
·
Journal of Applied Physics
·
8
Intersubband transition in InGaAs/AlAsSb/InP coupleddouble quantum well structuresoptimised for communication wavelength operation
2000
·
A. Neogi
, H. Yoshida
, et al.
·
Electronics Letters
·
6
Waveguide design of InGaAs/AlAs/AlAsSb inter-subband transition optical switch
2005
·
S. Sekiguchi
, T. Simoyama
, et al.
·
Optical Fiber Communication Conference
·
5
Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
2004
·
J. Kasai
, T. Mozume
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
4
PDF
Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching
2002
·
H. Yoshida
, T. Mozume
, et al.
·
IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)
·
4
Very low saturation intensity and ultrafast responseof 1.5 µm intersubbandabsorption in n -doped InGaAs/AlAsSb MQW
2000
·
T. Akiyama
, A. Neogi
, et al.
·
Electronics Letters
·
4
Si-SiO2 interface states enhanced by oxidation-induced stacking faults
1992
·
H. Yoshida
, M. Ohmori
, et al.
·
Applied Physics Letters
·
4
Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells
2001
·
A. Neogi
, H. Yoshida
, et al.
·
Optical and Quantum Electronics
·
3
Contactless transient spectroscopy for the measurement of localized states in semiconductors
1998
·
S. Kishino
, H. Yoshida
·
International Conference on Characterization and Metrology for ULSI Technology
·
3
Intersubband Transitions In LnGaAs/AlAs Coupled Double Quantum Well (c-dqw) Structures For Multi-wavelength All-optical Switching
2005
·
H. Yoshida
, T. Mozume
, et al.
·
Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
·
2
Ultrafast (∼1 THz) 1.55 μm all-optical switch using intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
2002
·
T. Akiyama
, N. Georgiev
, et al.
·
Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
·
2
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Works count:
43
Citation count:
1,088
H-index:
13
I10-index:
14
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