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T. Nagano

Observed names: Nagano, T., Takatoshi NAGANO, Takatoshi Nagano
Institution: Ibaraki University
ORCID: 0000-0002-4327-5552
Observed ORCID: 0000-0002-4327-5552
OpenAlex ID: A5111516505
Calculation of the interfacial energies between α and γ iron and equilibrium particle shape
2006 · T. Nagano, M. Enomoto · Metallurgical and Materials Transactions A · 60
Simulation of the growth of copper critical nucleus in dilute bcc Fe–Cu alloys
2006 · Takatoshi Nagano, Masato Enomoto · Scripta Materialia · 34
Advanced TFT SRAM cell technology using a phase-shift lithography
1995 · T. Yamanaka, T. Hashimoto, et al. · IEEE Transactions on Electron Devices · 33
Electronic structure, bonding nature, and charge transfer in Ba@Si20 and Si20 clusters: An ab initio study
2001 · Takatoshi Nagano, Kazuo Tsumuraya, et al. · Physical review. B, Condensed matter · 27
Large constriction of lattice constant in epitaxial magnesium oxide thin film: Effect of point defects on lattice constant
2010 · Satoru Kaneko, Takatoshi Nagano, et al. · Journal of Applied Physics · 26
Ultrahigh-voltage high-current gate turn-off thyristors
1984 · T. Yatsuo, T. Nagano, et al. · IEEE Transactions on Electron Devices · 26
High speed BiCMOS VLSI technology with buried twin well structure
1985 · A. Watanabe, T. Ikeda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
High power static induction thyristor
1979 · Y. Terasawa, K. Miyata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
One-dimensional analysis of turnoff phenomena for a gate turnoff thyristor
1979 · M. Naito, T. Nagano, et al. · IEEE Transactions on Electron Devices · 22
A snubber-less GTO
1982 · T. Nagano, H. Fukui, et al. · PESC record · 18
Calculation of the Equilibrium Shape of TiN Particles in Iron
2004 · M. Enomoto, Z.-G. Yang, et al. · ISIJ International · 14
Substrate temperature dependence of electrical and structural properties of Ru films
2011 · Takatoshi Nagano, Kazuya Inokuchi, et al. · Thin Solid Films · 13
Pinning Effect of Fe(ClO) and Ti(ClO) Compounds on Cu Grain Growth in Very Narrow Cu Wires
2015 · T. Nagano, Y. Sasajima, et al. · ECS Electrochemistry Letters · 6
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Increased hot-carrier degradation of NMOSFETs under very fast transient stressing
2002 · O. Matsuzaki, A. Watanabe, et al. · IEEE International Reliability Physics Symposium proceedings · 5
Bonding Nature of Si7 Bicapped Pentagon Cluster: Ab-initio Study
1999 · Haruki Eguchi, Kazuo Tsumuraya, et al. · Materials Transactions JIM · 5
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Pseudo-SOI: P-N-P-channel-doped bulk MOSFET for low-voltage high-performance applications
2002 · M. Miyamoto, R. Nagai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
An asymmetrically doped buried-layer (ADB) structure for low-voltage mixed analog-digital CMOS LSI's
1999 · M. Miyamoto, K. Toyota, et al. · IEEE Transactions on Electron Devices · 4
Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect
2013 · T. Nagano, K. Tamahashi, et al. · ECS Electrochemistry Letters · 3
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Calculation of the interfacial energies between α and γ iron and equilibrium particle shape
2006 · T. Nagano, M. Enomoto · Metallurgical and Materials Transactions A · 3
A 6.93-μm/sup 2/ n-gate full CMOS SRAM cell technology with high-performance 1.8-V dual-gate CMOS for peripheral circuits
2002 · M. Minami, N. Ohki, et al. · Symposium on VLSI Technology · 3
Exohedral Bonding Nature of Si Atom on the Ba@Si28 Cluster; Ab Initio Study
2002 · Kazuo Tsumuraya, Takatoshi Nagano, et al. · MATERIALS TRANSACTIONS · 3
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A 2.3/spl mu/m/sup 2/, Single-Bit-Line SRAM Cell with High Soft-Error-Immune Structure
1993 · T. Yamanaka, K. Ueda, et al. · Symposium on VLSI Technology · 3
Characteristics of a 1.2-µm CMOS technology fabricated on an RF-heated zone-melting recrystallized SOI
1986 · Y. Kobayashi, A. Fukami, et al. · IEEE Electron Device Letters · 3
Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
2018 · Jin Onuki, Kunihiro Tamahashi, et al. · IEEE Journal of the Electron Devices Society · 2
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Ab initio calculation study on the site of hydrogen in Al–Zn–Mg alloys
2016 · Takatoshi Nagano, Yasushi Sasajima, et al. · Journal of Japan Institute of Light Metals · 2
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Works count: 89
Citation count: 387
H-index: 12
I10-index: 12
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