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Houcine Mejri

Observed names: H Mejri, H. Mejri, Mejri, H.
OpenAlex ID: A5111541847
Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses
2000 · N Jaba, A Kanoun, et al. · Journal of Physics Condensed Matter · 82
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Stark effect studied in -doped GaAs structures
1997 · A Ben Jazia, H Mejri, et al. · Semiconductor Science and Technology · 55
Modeling of polarization charge in N-face InGaN/GaN MQW solar cells
2015 · R. Belghouthi, S. Taamalli, et al. · Materials Science in Semiconductor Processing · 41
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Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
2009 · I. Saidi, M. Gassoumi, et al. · Journal of Applied Physics · 40
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Modeling of adsorption isotherms of reactive red RR-120 on spirulina platensis by statistical physics formalism involving interaction effect between adsorbate molecules
2018 · Fakher Ayachi, Eder C. Lima, et al. · Progress in Biophysics and Molecular Biology · 36
Thermal effects in AlGaN/GaN/Si high electron mobility transistors
2011 · I. Saidi, Y. Cordier, et al. · Solid-State Electronics · 31
Effect of temperature on electronic and electrical behavior of InGaN double hetero-junction p-i-n solar cells
2019 · Rabeb Belghouthi, Michel Aillerie, et al. · Journal of Materials Science Materials in Electronics · 29
Electronic band parameters for zinc-blende Al1$minus$xGaxN
2002 · A Bhouri, F Ben Zid, et al. · Journal of Physics Condensed Matter · 27
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Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors
2006 · I. Saidi, L. Bouzaïene, et al. · Solid State Communications · 26
Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures
2002 · F. Ben Zid, A. Bhouri, et al. · Journal of Applied Physics · 26
Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
2015 · I. Saidi, H. Mejri, et al. · Superlattices and Microstructures · 24
Effects of Activator Ion Concentration on the Upconversion Processes in Er3+-Doped TeO2-ZnO Glass
2001 · A. Kanoun, N. Jaba, et al. · physica status solidi (a) · 22
Optical nonlinearities in delta-doped AlGaN/GaN quantum well heterostructures
2007 · I. Saidi, L. Bouzaïene, et al. · Journal of Applied Physics · 18
Time-resolved luminescence data on the 1060 nm transition in Nd3+-doped zinc tellurite glasses
2000 · N Jaba, A Kanoun, et al. · Journal of Physics Condensed Matter · 17
The electronic states calculated using the sinusoidal potential for Cd1−xZnxS quantum dot superlattices
2010 · A. Sakly, N. Safta, et al. · Journal of Alloys and Compounds · 16
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
2013 · H. Mosbahi, M. Gassoumi, et al. · Current Applied Physics · 15
Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
2007 · I. Saidi, L. Bouzaïene, et al. · Materials Science and Engineering C · 15
Electronic and optical properties of Cd1-xZnxS nanocrystals
2006 · N. Safta, A. Sakly, et al. · The European Physical Journal B · 15
The electronic band parameters calculated by the Kronig–Penney method for Cd1−xZnxS quantum dot superlattices
2008 · A. Sakly, N. Safta, et al. · Journal of Alloys and Compounds · 14
Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors
2006 · N. Safta, A. Sakly, et al. · The European Physical Journal B · 13
Electronic structure and optical properties of Si1−xGex alloys
2002 · F. Ben Zid, A. Bhouri, et al. · Physica B Condensed Matter · 11
Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1 xN
2004 · A Bhouri, H Mejri, et al. · Journal of Physics Condensed Matter · 10
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Time-resolved spectra of the 1.55-eV band in Ge-doped AlxGa1−xAs
1990 · H. Mejri, H. Maaref · Journal of Applied Physics · 10
The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol‐Gel Technique
2010 · A. Sakly, N. Safta, et al. · Journal of Nanomaterials · 8
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Statistical analysis in the negative-U model of donors in AlxGa1−xAs:Si
2000 · F. Rziga-Ouaja, H. Mejri, et al. · Journal of Applied Physics · 8
Works count: 53
Citation count: 680
H-index: 15
I10-index: 23
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