Author

S. Usui

Observed names: SETSUO USUI, Setsuo USUI, Setsuo Usui, Setsuo Usui Setsuo Usui, USUI, SETSUO, 碓井節夫

Observed institution: Sony (Japan)

OpenAlex ID: A5111614479

Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction

1997 · J. Westwater, D. P. Gosain, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 671

XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

1985 · T. Sameshima, M. Sekiya, et al. · International Conference on Solid State Devices and Materials (SSDM) · 355

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

1989 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 198

Properties of heavily doped GDSi with low resistivity

1979 · S. Usui, M. Kikuchi · Journal of Non-Crystalline Solids · 137

High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C

2000 · Dharam Pal Gosain, Takashi Noguchi, et al. · Japanese Journal of Applied Physics · 111

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Pulsed laser-induced amorphization of silicon films

1991 · T. Sameshima, S. Usui · Journal of Applied Physics · 94

Pulsed laser-induced melting followed by quenching of silicon films

1993 · T. Sameshima, S. Usui · Journal of Applied Physics · 80

Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions

1987 · T. Sameshima, S. Usui, et al. · Journal of Applied Physics · 77

Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique

1997 · Jonathan Westwater, Dharam Pal Gosain Dharam Pal Gosain, et al. · Japanese Journal of Applied Physics · 64

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A new method of growing GaP crystals for light-emitting diodes

1973 · K. Kaneko, M. Ayabe, et al. · Proceedings of the IEEE · 59

Mechanism of pulsed laser-induced amorphization of silicon films

1991 · T. Sameshima, S. Usui · Applied Physics Letters · 55

Si Nanowires Grown via the Vapour–Liquid–Solid Reaction

1998 · J. Westwater, D. P. Gosain, et al. · physica status solidi (a) · 51

Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon

1982 · Y. Hayafuji, K. Kajiwara, et al. · Journal of Applied Physics · 47

Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H

1989 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 46

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

1986 · T. Sameshima, S. Usui · MRS Proceedings · 46

Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping

1982 · Takashi Noguchi, Setsuo Usui, et al. · Japanese Journal of Applied Physics · 38

Diffusion of Phosphorus in Gallium Melt

1974 · Kunio Kaneko, Masaoki Ayabe, et al. · Journal of The Electrochemical Society · 34

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Laterally seeded regrowth of silicon over SiO2 through strip electron beam irradiation

1983 · Y. Hayafuji, T. Yanada, et al. · Applied Physics Letters · 33

Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization

1990 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 32

Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

1990 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 30

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Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser

1987 · Toshiyuki Sameshima, Setsuo Usui · Japanese Journal of Applied Physics · 29

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Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique

1987 · Toshiyuki Sameshima, Setsuo Usui, et al. · Japanese Journal of Applied Physics · 19

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Near Infrared Absorption in P-Doped ZnTe Crystals

1965 · Naozo Watanabe, Setsuo Usui · Japanese Journal of Applied Physics · 14

High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation

1995 · Dharam Pal Gosain, Jonathan Westwater, et al. · Japanese Journal of Applied Physics · 13

Properties of a-Si : H : F deposited in SiF4/SiH4/Ar Gas mixtures by a glow-discharge technique

1980 · S. Usui, A. Sawada, et al. · Journal of Non-Crystalline Solids · 13

Works count: 61

Citation count: 2,478

H-index: 21

I10-index: 30