Get started
Author

Soenke Tautz

Observed names: S. Tautz, TAUTZ, SOENKE
Institution: OSRAM (Germany)
OpenAlex ID: A5111627437
Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes
2006 · M. Bou Sanayeh, A. Jaeger, et al. · Applied Physics Letters · 58
Recent results of blue and green InGaN laser diodes for laser projection
2011 · Stephan Lutgen, Dimitri Dini, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 46
Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes
2012 · T. Hager, G. Brüderl, et al. · Applied Physics Letters · 33
Visible GaN laser diodes: from lowest thresholds to highest power levels
2019 · Harald König, Muhammad Ali, et al. · Novel In-Plane Semiconductor Lasers · 32
GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs
2017 · Uwe Strauss, Andre Somers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 26
Carrier transport in green AlInGaN based structures on c-plane substrates
2013 · T. Hager, M. Binder, et al. · Applied Physics Letters · 16
Gain analysis of blue nitride-based lasers by small signal modulation
2010 · J. Müller, M. Scheubeck, et al. · Applied Physics Letters · 14
Blue high power InGaN semiconductor laser diodes: Design optimization of laser bars and single emitters for best performance and reliability
2020 · Harald König, Sven Gerhard, et al. · High-Power Diode Laser Technology · 13
InGaN power laser chips in a novel 50W multi-die package
2015 · Andreas Loeffler, Christoph Eichler, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power
2023 · Sven Gerhard, Lars Naehle, et al. · Gallium Nitride Materials and Devices · 5
900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm
2004 · N. Linder, R. Butendeich, et al. · Conference on Lasers and Electro-Optics · 5
Highly reliable and efficient laser bars and cost efficient packaging
2005 · Martin Behringer, Soenke Tautz, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Recent advances in high power blue laser diodes
2017 · Muhammad Ali, Sven Gerhard, et al. · IEEE High Power Diode Lasers and Systems Conference (HPD) · 3
Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes
2010 · J. Müller, G. Brüderl, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Blue and green nitride based laser diodes for projection
2013 · Georg Bruederl, Thomas Hager, et al. · Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) · 1
Angular resolved far-field dynamics of (Al,In)GaN laser diodes
2020 · Hassan S. Banayeem, Matthias Damm, et al. · Gallium Nitride Materials and Devices
An industry perspective on the optimization of InGaN lasers and LEDs via modeling
2011 · A. Gomez-Iglesias, M. Sabathil, et al. · International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
High power AlInGaP broad area lasers and laser bars in the visible range from 635 nm to 670 nm
2004 · Soenke Tautz, Christian Karnutsch, et al. · Conference on Lasers and Electro-Optics
Works count: 22
Citation count: 271
H-index: 9
I10-index: 9
Year
Topic
Type