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S. J. Lim

Observed names: S.J. Lim, Seong-Hwan Lim
ORCID: 0009-0000-6036-228X
Observed ORCID: 0009-0000-6036-228X
OpenAlex ID: A5111652412
High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
2007 · S. J. Lim, Soon-ju Kwon, et al. · Applied Physics Letters · 177
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Raman scattering investigation of Yb : YAG crystals grown by the Czochralski method
2003 · Y. F. Chen, P. K. Lim, et al. · Journal of Raman Spectroscopy · 73
Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor
2008 · J. Y. Son, S. J. Lim, et al. · Applied Physics Letters · 72
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Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties
2009 · S. J. Lim, Jae-Min Kim, et al. · Journal of The Electrochemical Society · 55
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Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties
2011 · Jae-Min Kim, Taewook Nam, et al. · Applied Physics Letters · 50
The Effects of Ultraviolet Exposure on the Device Characteristics of Atomic Layer Deposited-ZnO:N Thin Film Transistors
2011 · Jae-Min Kim, S. J. Lim, et al. · Journal of The Electrochemical Society · 25
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Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient
2024 · Seong-Hwan Lim, Dong-Gyun Mah, et al. · Nanomaterials · 16
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The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
2010 · S. J. Lim, Jae-Min Kim, et al. · Electrochemical and Solid-State Letters · 16
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Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition
2007 · W. J. Maeng, S. J. Lim, et al. · Applied Physics Letters · 12
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In-Situ Doping during ZnO Atomic Layer Deposition
2008 · S. J. Lim, Sung Kyun Lee, et al. · Journal of the Korean Physical Society · 10
Enhancing oxide semiconductor channel performance through heterojunction engineering of indium–tungsten oxide and indium–gallium–zinc oxide
2024 · Seong-Hwan Lim, Dong-Gyun Mah, et al. · Japanese Journal of Applied Physics · 5
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High performance transparent thin film transistor with atomic layer deposition ZnO based active channel layer
2010 · Hyungjun Kim, S. J. Lim, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Enhancement of Synaptic Performance through Synergistic Indium Tungsten Oxide-Based Electric-Double-Layer and Electrochemical Doping Mechanisms
2024 · Dong-Gyun Mah, Seong-Hwan Lim, et al. · Electronics · 2
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The Benefits of Atomic Layer Deposition in Non-semiconductor Applications; Producing Metallic Nanomaterials and Fabrication of Flexible Display
2009 · Hyungjun Kim, Woo-Hee Kim, et al. · ECS Transactions · 2
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Dual-Mode Charge Trap Flash Memory Using Nickel-Silicide Schottky-Junction Reconfigurable FETs via Channel Modulation Engineering
2025 · Ki-Ju Park, Seong-Hwan Lim, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Low-temperature hybrid microwave annealing process for high-performance indium–tungsten oxide thin-film transistors
2025 · Hyun-Sik Choi, Seong-Hwan Lim, et al. · Applied Physics Letters · 1
The Electrical Properties of Atomic Layer Deposition of ZnO:N Thin Film Transistors by Ultraviolet Exposure
2010 · Jae-Min Kim, S. J. Lim, et al. · ECS Transactions · 1
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The application of atomic layer deposition for transparent thin film transistor
2006 · S.J. Lim, Soonju Kwon, et al. · IEEE Nanotechnology Materials and Devices Conference (NMDC) · 1
Dual-mode NiSi x Schottky junction RFET-based charge-trap memory with symmetric ambipolar and multilevel operation
2026 · Ki-Ju Park, Seong-Hwan Lim, et al. · Japanese Journal of Applied Physics
Impact of Microwave Annealing and Ar/O2 Plasma Treatment on the Electrical Performance and Stability of Solution-Processed IWO Thin-Film Transistors
2025 · Seong-Hwan Lim, Seung-Jin Lee, et al. · International Conference on Solid State Devices and Materials (SSDM)
Highly Sensitive Cortisol Detection in Complex Environments Using a Dual-Gate FET Sensor with SnO2 Extended Gate
2025 · Seung-Jin Lee, Seong-Hwan Lim, et al. · International Conference on Solid State Devices and Materials (SSDM)
Long-Term Stable and High-Performance Indium–Tungsten Oxide Thin Film Transistors for Transparent Electronics
2025 · Seung-Hyun Lee, Seong-Hwan Lim, et al. · SSRN Electronic Journal
Enhancing Synaptic Performance through the Synergistic Effects of Indium Tungsten Oxide-based Electric Double Layer and Electrochemical Doping
2024 · Dong-Gyun Mah, Seong-Hwan Lim, et al. · International Conference on Solid State Devices and Materials (SSDM)
Enhancing Stability and Mobility in TFTs through Indium-Tungsten-Oxide and Indium-Gallium-Zinc-Oxide Heterojunction Engineering: Exploring ISFET Applicability
2024 · Seong-Hwan Lim, Dong-Gyun Mah, et al. · International Conference on Solid State Devices and Materials (SSDM)
The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor
2011 · Jae-Min Kim, S. J. Lim, et al. · AIP conference proceedings
Works count: 27
Citation count: 523
H-index: 10
I10-index: 10
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