Author

C.-P. Ouyang

Observed names: C.-P Ouyang, Cheng-Pei Ouyang, Ouyang, C. P., Ouyang,C. P.

Institution: National Synchrotron Radiation Research Center

Observed institutions: National Tsing Hua University, National Synchrotron Radiation Research Center

OpenAlex ID: A5111702333

Oxidation of Si(001)-2×1

2001 · T.-W Pi, J.-F Wen, et al. · Surface Science · 34

Surface core-level shifts of Ge(100)−2×1

2001 · T.-W. Pi, J.-F. Wen, et al. · Physical review. B, Condensed matter · 21

Chemisorption of C60 on the Si(001)-2×1 surface at room temperature

2005 · C.-P. Cheng, T.-W. Pi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 17

Electronic structure of tris(8-hydroxyquinolato) aluminum at room temperature and during annealing

2005 · T.-W. Pi, T. C. Yu, et al. · Physical Review B · 16

Early nucleation on the Si()-2×1 surface

2002 · T.-W Pi, C.-P Ouyang, et al. · Surface Science · 15

SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

2005 · C.-P. Cheng, T.-W. Pi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 11

Surface electronic structure of Mg-doped tris(8-hydroxyquinolato) aluminum studied by synchrotron radiation photoemission

2004 · T.-W. Pi, C.-P. Ouyang, et al. · Physical Review B · 10

Photoemission study of CaF2 on Si(001)-2×1 during annealing

2003 · T.-W. Pi, L.-C. Tien, et al. · Solid State Communications · 10

Solid state amorphization at the room temperature deposited Ir/Si interface

2002 · C.-P. Ouyang, J.-J. Chang, et al. · Journal of Applied Physics · 10

Adsorption of chlorine on the Si(001)-2×1 surface

2001 · Tun-Wen Pi, Shu-Fei Tsai, et al. · Surface Science · 10

Growth of the Ge overlayer on Si(100)-(2×1)

2000 · T.-W. Pi, R.-T. Wu, et al. · Surface Science · 9

Surface-charge polarization effect at an organic and inorganic contact: Case study of tris(8-hydroxyquinolato) aluminum on Si(001)-2×1

2004 · Tun-Wen Pi, C.-P. Ouyang, et al. · Applied Physics Letters · 7

Solid state amorphization at the room temperature deposited Ni∕Si(100) interface

2005 · J.-F. Wen, L.-B. Wang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 5

Band bending at the Ni/Si(100)-2×1 submonolayer interface

2004 · J.-F. Wen, C.-H. Liu, et al. · Solid State Communications · 3

Formation of Si-terminated SiC films on annealing C60 on a Si(001)-2×1 surface

2006 · C.-P. Cheng, J.-F. Wen, et al. · Thin Solid Films · 1

Amorphous-crystalline transition at the Ir/Si(100) interface

2003 · C.-P. Ouyang, J.-J. Chang, et al. · Journal of Applied Physics

Works count: 18

Citation count: 179

H-index: 10

I10-index: 10