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Azumi Ito
Institution:
Zeon (Japan)
Observed institutions:
Hokkaido University,
Kyoto University,
Zeon (Japan)
OpenAlex ID:
A5111708319
Synthesis of 2,5-Bis(binaphthyl)phospholes and Phosphametallocene Derivatives and Their Application in Palladium-Catalyzed Asymmetric Hydrosilylation
2006
·
Masamichi Ogasawara
, Azumi Ito
, et al.
·
Organometallics
·
80
Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
2012
·
Yudai Miyawaki
, Yusuke Kondo
, et al.
·
Japanese Journal of Applied Physics
·
39
PDF
Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
2017
·
Sebastian U. Engelmann
, Robert L. Bruce
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
25
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
2018
·
Hiroyuki Miyazoe
, Nathan Marchack
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
20
Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications
2018
·
Nathan Marchack
, Hiroyuki Miyazoe
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
11
Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition
2012
·
Yoshiyuki Kikuchi
, Kotaro Miyatani
, et al.
·
Japanese Journal of Applied Physics
·
1
PDF
The Etching Characteristics and Dissociation Behavior of High Selective Si 3 N 4 Etching Gas C 4 H 9 F
2017
·
Azumi Ito
, Hirotoshi Inui
, et al.
·
The Japan Society of Applied Physics
Reduction Mechanism of Surface Roughness on ArF-Photoresist Using C$_{5}$HF$_{7}$ Gas Plasma
2013
·
Yudai Miyawaki
, Keigo Takeda
, et al.
·
Bulletin of the American Physical Society
Mechanism of Highly Selective SiO$_{2}$ Etching over Si using New Alternative Gas, C$_{5}$HF$_{7}$
2011
·
Yudai Miyawaki
, Keigo Takeda
, et al.
·
Bulletin of the American Physical Society
SiO$_{2}$ Film Etching Process Using Environment-Friendly New Gas C$_{5}$F$_{7}$H
2009
·
Yudai Miyawaki
, Keigo Takeda
, et al.
·
Bulletin of the American Physical Society
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Works count:
10
Citation count:
176
H-index:
5
I10-index:
5
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