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Don L. Lin

Observed names: D. L Lin, D. L. Lin, D. Lin, D.L. Lin
Institution: Himax (Taiwan)
OpenAlex ID: A5111789476
From lightning to charged-device model electrostatic discharges
1993 · Don L. Lin, Terry L. Welsher · Journal of Electrostatics · 52
A comparison of electrostatic discharge models and failure signatures for CMOS integrated circuit devices
1995 · M. Kelly, G. Servais, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 41
ESD sensitivity and VLSI technology trends: thermal breakdown and dielectric breakdown
1994 · D.L. Lin · Journal of Electrostatics · 33
Thermal breakdown of VLSI by ESD pulses
2002 · D.L. Lin · IEEE International Reliability Physics Symposium proceedings · 22
Metrology and methodology of system level ESD testing
2002 · D. Lin, D. Pommerenke, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 20
A Robust ESD Event Locator System With Event Characterization
1997 · D.L. Lin, L.F. DeChiaro, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 14
Off-chip protection: Shunting of ESD current by metal fingers on integrated circuits and printed circuit boards
1995 · D.L. Lin, M.-C. Jon · Journal of Electrostatics · 10
On the Validity of ESD Threshold Data Obtained Using Commercial Human-Body Model Simulators
1987 · D. L. Lin, M. S. Strauss, et al. · IEEE International Reliability Physics Symposium proceedings · 8
FCBM-a field-induced charged-board model for electrostatic discharges
2003 · D.L. Lin · IEEE Industry Applications Society Annual Meeting (IAS) · 6
Effect of VLSI technology scaling on ESD current-carrying capability
1997 · D.L. Lin · Journal of Electrostatics · 6
An intelligent memory system
1988 · A. Asthana, H. V. Jagadish, et al. · ACM SIGARCH Computer Architecture News · 6
A robust ESD event locator system with event characterization
1998 · Don L. Lin, Louis F. DeChiaro, et al. · Journal of Electrostatics · 5
Justifications for reducing HBM and MM ESD qualification test time
1996 · K. Verhaege, D. Robinson-Hahn, et al. · Microelectronics Reliability · 4
The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor
2017 · C. C Fan, Y. C Chiu, et al. · Journal of Nanoscience and Nanotechnology · 1
A comparison of electrostatic discharge models and failure signatures for CMOS integrated circuit devices
1996 · M. Kelly, G. Servais, et al. · Journal of Electrostatics · 1
Works count: 15
Citation count: 229
H-index: 8
I10-index: 7
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