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Chih-Chiang Kao

Observed names: Chi-Chiang Kao, Chih Chiang Kao
OpenAlex ID: A5111853421
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
2008 · Tien-Chang Lu, Chih-Chiang Kao, et al. · Applied Physics Letters · 287
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕GaN distributed Bragg reflector
2008 · Tien-Chang Lu, Shih-Wei Chen, et al. · Applied Physics Letters · 92
Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls
2004 · Chih-Chiang Kao, Hao-Chung Kuo, et al. · IEEE Photonics Technology Letters · 79
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector
2005 · Chih-Chiang Kao, Y. C. Peng, et al. · Applied Physics Letters · 71
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
2004 · Hung-Wen Huang, Chih-Chiang Kao, et al. · Materials Science and Engineering B · 61
Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
2007 · Shing-Chung Wang, Tien-Chang Lu, et al. · Japanese Journal of Applied Physics · 48
Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
2006 · Jung-Tang Chu, Tien-chang Lu, et al. · Japanese Journal of Applied Physics · 39
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
2007 · Chih-Chiang Kao, H. C. Kuo, et al. · IEEE Photonics Technology Letters · 38
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
2004 · Chih-Chiang Kao, H.W Huang, et al. · Materials Science and Engineering B · 38
Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers
2006 · Jung-Tang Chu, Tien-Chang Lu, et al. · Applied Physics Letters · 32
Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
2005 · Jung-Tang Chu, Hung-Wen Huang, et al. · Japanese Journal of Applied Physics · 32
Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
2005 · Tao-Hung Hsueh, Hung-Wen Huang, et al. · Japanese Journal of Applied Physics · 29
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Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask
2007 · Gong-Ru Lin, Chun-Jung Lin, et al. · Applied Physics Letters · 27
Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
2005 · Jung-Tang Chu, Chih-Chiang Kao, et al. · Japanese Journal of Applied Physics · 22
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta/sub 2/O/sub 5/--SiO/sub 2/ distributed Bragg reflectors
2006 · Chih-Chiang Kao, T.C. Lu, et al. · IEEE Photonics Technology Letters · 20
Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals
2006 · Chung-Hsiang Lin, Jui-Yen Tsai, et al. · Japanese Journal of Applied Physics · 20
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GaN-Based High-$Q$ Vertical-Cavity Light-Emitting Diodes
2007 · Tien-Chang Lu, Tsung-Ting Kao, et al. · IEEE Electron Device Letters · 16
Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers
2006 · Gong-Ru Lin, Hao-Chung Kuo, et al. · Applied Physics Letters · 16
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
2006 · Hung-Wen Huang, Chih-Chiang Kao, et al. · Materials Science and Engineering B · 13
Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces
2006 · Hung-Wen Huang, Jung-Tang Chu, et al. · Japanese Journal of Applied Physics · 7
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Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors
2006 · Yu-Chun Peng, Chih-Chiang Kao, et al. · Japanese Journal of Applied Physics · 6
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CW lasing of current injection blue GaN-based vertical cavity surface emitting lasers
2008 · Tien-Chang Lu, Tsung-Ting Kao, et al. · Conference on Lasers and Electro-Optics · 5
Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O
2006 · Fang-I Lai, Wei-Yo Chen, et al. · Japanese Journal of Applied Physics · 5
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
2005 · Jung-Tang Chu, Wen-Deng Liang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
InGaN-based light-emitting diode with undercut side wall
2004 · Chih-Chiang Kao, J.T. Chu, et al. · Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS) · 1
Works count: 34
Citation count: 1,005
H-index: 16
I10-index: 19
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