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Author

C. W. Liang

Observed name: Chuangzhang Liang
Institution: Jiangnan University
ORCID: 0009-0009-7399-7140
Observed ORCID: 0009-0009-7399-7140
OpenAlex ID: A5111868326
The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique
2012 · H. M. Tsai, E. R. Hsieh, et al. · Symposium on VLSI Technology · 13
New observations on the physical mechanism of Vth-variation in nanoscale CMOS devices after long term stress
2011 · E. R. Hsieh, Steve S. Chung, et al. · IEEE International Reliability Physics Symposium proceedings · 13
A 28nm poly/SiON CMOS technology for low-power SoC applications
2011 · C. W. Liang, Miaodi Chen, et al. · Symposium on VLSI Technology · 12
High-performance, broadband, and self-driven photodetector based on MoTe2 homojunction with asymmetrical contact interfaces
2025 · Kangwei Shao, Zhengjin Weng, et al. · Applied Physics Letters · 10
Fabrication and characterization of InGaAlP∕InGaP semiconductor circular ring lasers
2005 · M. C. Shih, S. C. Wang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology
2012 · C. H. Tsai, C. W. Yang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 5
A novel and direct experimental observation of the discrete dopant effect in ultra-scaled CMOS devices
2011 · E. R. Hsieh, Steve S. Chung, et al. · Symposium on VLSI Technology · 5
Segmented tri-gate bulk CMOS technology for device variability improvement
2010 · C. H. Tsai, T.-J. King Liu, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
Ultrasensitive MoS2 photodetectors enabled by MnPS3 interface engineering
2025 · Chuangzhang Liang, Haiyan Nan, et al. · Materials Science in Semiconductor Processing · 3
The impact of the carrier transport on the random dopant induced drain current variation in the saturation regime of advanced strained-silicon CMOS devices
2012 · E. R. Hsieh, Steve S. Chung, et al. · IEEE Silicon Nanoelectronics Workshop · 1
Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs
2011 · X. S. Cheng, E. R. Hsieh, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1
A Novel and Direct Measurement of the Mobility on Very Small Dimension CMOS Devices with Channel Length Down to 20nm
2012 · E. R. Hsieh, S. Chung, et al. · International Conference on Solid State Devices and Materials (SSDM)
The Experimental Observation of the Process Induced Random Dopant Effect in Trigate MOSFETs
2012 · E. R. Hsieh, H. M. Tsai, et al. · International Conference on Solid State Devices and Materials (SSDM)
New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices
2012 · E. R. Hsieh, S. S. Chung, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Random Trap Fluctuation (RTF) Induced Vth Variability and the Impact on the Reliability of Strained-Silicon CMOS Devices
2011 · E. R. Hsieh, C. Y. Cheng, et al. · International Conference on Solid State Devices and Materials (SSDM)
The Observation of the Random Dopant Fluctuation in Strained-SOI Devices
2010 · C. Y. Cheng, E. R. Hsieh, et al. · International Conference on Solid State Devices and Materials (SSDM)
56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS
2007 · K. H. Lee, C. T. Huang, et al. · International Conference on Solid State Devices and Materials (SSDM)
The Fabrication of the Double Ring Resonators Semiconductor Laser
2007 · M. C. Shih, S.C. Wang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 18
Citation count: 73
H-index: 5
I10-index: 4
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