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Cheng-Kuo Lin
Institution:
Lunghwa University of Science and Technology
Observed institutions:
National Central University,
Industrial Technology Research Institute,
Lunghwa University of Science and Technology
OpenAlex ID:
A5111940946
Transient pulsed analysis on GaN HEMTs at cryogenic temperatures
2005
·
Ching-Hui Lin
, Wen-Kai Wang
, et al.
·
IEEE Electron Device Letters
·
55
Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication
2004
·
Wen-Kai Wang
, Po-Chen Lin
, et al.
·
IEEE Electron Device Letters
·
41
BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs
2004
·
Cheng-Kuo Lin
, Wen-Kai Wang
, et al.
·
IEEE Transactions on Electron Devices
·
19
A multi-sequestration concept of CO 2 geological storage: Shale-Sandstone-Basalt system in Northwestern Taiwan
2017
·
Pei-Shan Hsieh
, Neng-Chuan Tien
, et al.
·
International journal of greenhouse gas control
·
14
A $W$-band Injection-Locked Frequency Divider Using GaAs pHEMTs and Cascode Circuit Topology
2007
·
Fan-Hsiu Huang
, Cheng-Kuo Lin
, et al.
·
IEEE Microwave and Wireless Components Letters
·
13
Single-chip RF Front-end MMIC using InGaAs E/DpHEMT for 3.5 GHz WiMAX applications
2007
·
Yu-Cheng Hsu
, Ping-Hsun Wu
, et al.
·
European Microwave Integrated Circuits Conference
·
10
The GTFSampler: A new downhole equipment for geothermal fluid sampling and its testing results in the Chingshiu geothermal field, Ilan, Taiwan
2021
·
Pei-Shan Hsieh
, Cheng-Kuo Lin
, et al.
·
Geothermics
·
6
Geochemical investigation of groundwater in a Granitic Island: a case study from Kinmen Island, Taiwan
2009
·
Tai-Sheng Liou
, Hsueh-Yu Lu
, et al.
·
Environmental Geology
·
6
Dual-Gate E/E- and E/D-Mode AlGaAs/InGaAs pHEMTs for Microwave Circuit Applications
2007
·
Dong-Ming Lin
, Cheng-Kuo Lin
, et al.
·
IEEE Transactions on Electron Devices
·
6
Thermo-mechanical analysis and interfacial energy release rate estimation for metal–insulator–metal capacitor device
2010
·
Ming-Che Hsieh
, Sheng-Tsai Wu
, et al.
·
Microelectronic Engineering
·
3
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications
2022
·
Keiichi Matsushita
, Chih-Yuan Chan
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
2
A broadband stacked power amplifier using 2-µm GaAs HBT process for C-band applications
2008
·
Chih-Chun Shen
, Fan-Hsiu Huang
, et al.
·
Asia-Pacific Microwave Conference (APMC)
·
2
The assessment of output digital spectra in quasi enhancement-mode pHEMTs by a modified large-signal model
2003
·
Shih-Cheng Yang
, Chih-Wei Wang
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
2
Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
2002
·
Cheng-Kuo Lin
, Yi-Jen Chan
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
2
A 30 GHz Single-Chip PLL MMIC Using 0.5 um Enhanced/Depletion-Mode GaAs pHEMT
2007
·
Fan-Hsiu Huang
, Cheng-Kuo Lin
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
1
Single-chip RF front-end MMIC using InGaAs E/DpHEMT for 3.5 GHz WiMAX applications
2007
·
Yu-Cheng Hsu
, Ping-Hsun Wu
, et al.
·
European Microwave Conference (EuMC)
·
1
Low damage, high selectivity Ar/Cl2/CH4/O2 gate recess etching for AlGaN/GaN HEMT fabrication
2003
·
Wen-Kai Wang
, Yu-Jen Li
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
The fabric enhancement-mode metamorphic InAlAs/InGaAs HEMT by Pt Schottky metal diffusion
2003
·
Cheng-Kuo Lin
, Jing-Chang Wu
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
A 21-dB-Gain Cascaded Two-Stage Fully Integrated Distributed Amplifier With 1.2 THz Gain-Bandwidth Product and >15-dBm Peak P SAT in 70-nm GaAs pHEMT
2026
·
Xu Jiang
, Chih-Ju Wu
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
Deep Learning Assisted Compact Modeling of DC and High Frequency Scattering Parameters for High-Electron Mobility Transistors
2026
·
Chia-Wei Liao
, Han-Hsuan Lai
, et al.
·
International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
Analysis of flow pathway in a potential granitic host rock using Taiwan's K-area reference case data
2017
·
Tai‐Sheng Liou
, Roohollah Kalatehjari
, et al.
·
EGU General Assembly Conference Abstracts
Stress Dynamics of Magma Activity during Orogenic Evolution: An Example from Kinmen Island, SE China
2016
·
Ping-Chuan Chen
, En‐Chao Yeh
, et al.
·
EGU General Assembly Conference Abstracts
The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
2007
·
Wen-Kai Wang
, Yu-Jung Chang
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Characteristics of In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As (x= 50%,60%) metamorphic HEMTs on GaAs substrates
2005
·
Cheng-Kuo Lin
, Jing-Chang Wu
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
BCB-Bridged Distributed Wideband SPST Switch Using 0.25- mI n Al As-In Ga As Metamorphic HEMTs
2005
·
Cheng-Kuo Lin
, Wenkai Wang
, et al.
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Works count:
30
Citation count:
185
H-index:
6
I10-index:
6
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