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Luther-King Ngwendson

Observed names: L. Ngwendson, L.-K. Ngwendson, L.K. Ngwendson
OpenAlex ID: A5111965116
A novel trench clustered insulated gate bipolar transistor (TCIGBT)
2000 · O. Spulber, M. Sweet, et al. · IEEE Electron Device Letters · 25
Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology
2006 · K. Vershinin, M. Sweet, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 19
A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness
2017 · Ian Deviny, Haihui Luo, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 18
A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses
2018 · Yao Yao, Haihui Luo, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13
Clustered insulated gate bipolar transistor: a new power semiconductor device
2001 · M. Sweet, O. Spulber, et al. · IEE Proceedings - Circuits Devices and Systems · 12
Performance Evaluation of 10-kV SiC Trench Clustered IGBT
2011 · K. G. Menon, A. Nakajima, et al. · IEEE Electron Device Letters · 11
Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching
2009 · Soon Tat Kong, L.-K. Ngwendson, et al. · IEEE Transactions on Power Electronics · 8
Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT
2018 · L. Ngwendson, I. Deviny, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 7
A Study of the Influence of Technology on the Negative Gate Capacitance in 1.2kV IGBTs
2008 · S.T. Kong, L. Ngwendson, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 7
New Locos Trench Oxide IGBT Enables 25% Higher Current Density in 4.5kV/1500A Module
2019 · L. Ngwendson, I. Deviny, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 6
An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices
2009 · L. Ngwendson, M. R. Sweet, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 6
750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA Assessment
2022 · L. Ngwendson, C. Kong, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology
2006 · K. Vershinin, M. Sweet, et al. · International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM) · 4
An analysis on turn-off behaviour of 1.2kV NPT-CIGBT under clamped inductive load switching
2008 · S.T. Kong, L. Ngwendson, et al. · International Power Electronics and Motion Control Conference (IPEMC) · 2
Innovation and competition: are they crucial in power semiconductor industry? A market perspective
2003 · E.M. Sankara Narayanan, N. Moguilnaia, et al. · IEEE International Conference on Microelectronics (MIEL) · 2
Influence of the N+ floating emitter on the on-state characteristics of the Trench EST
2002 · O. Spulber, M. Sweet, et al. · CAS proceedings · 2
Exploring the RBSOA Boundaries of a 6.5kV/1000A Trench Gate IGBT Module at Different Temperatures
2020 · L. Ngwendson, Ian Deviny, et al. · PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management · 1
New 6.5kV/1000A modules with LOCOS Trench Oxide IGBT Chips and Design Variation for Traction and HVDC Applications
2019 · L. Ngwendson, Ian Deviny, et al. · International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · 1
Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies
2018 · Yogesh K. Sharma, Paul Mumby-Croft, et al. · 1
Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode
2012 · A. Balachandran, M. Sweet, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
2010 · Hongyao Long, Mark R. Sweet, et al. · Japanese Journal of Applied Physics · 1
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The investigation into the recent mergers and acquisitions in power semiconductor industry
2003 · N.A. Moguilnaia, K.V. Vershinin, et al. · IEEE International Engineering Management Conference (IEMC) · 1
Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance
2021 · S. T. Kong, L. Ngwendson · International Seminar on Power Semiconductors (ISPS)
6.5 kV Si/SiC Hybrid Power Module Technology
2019 · Yogesh Sharma, P. Mumby-Croft, et al. · Materials science forum
The accumulation enhanced emitter switched thyristor - a novel area efficient power semiconductor device
2003 · M. Sweet, O. Spulber, et al. · IEEE International Conference on Microelectronics (MIEL)
Works count: 25
Citation count: 152
H-index: 7
I10-index: 6
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