Author

Sheng-Yu Wang

Institution: National Yang Ming Chiao Tung University

Observed institutions: National Yang Ming Chiao Tung University, National Central University

OpenAlex ID: A5111996541

Multilevel resistive switching in Ti/CuxO/Pt memory devices

2010 · Sheng-Yu Wang, Chin-Wen Huang, et al. · Journal of Applied Physics · 164

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

2009 · Sheng-Yu Wang, Dai-Ying Lee, et al. · Applied Physics Letters · 116

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

2010 · Sheng-Yu Wang, Dai-Ying Lee, et al. · Nanotechnology · 94

Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO[sub 2] Thin Films

2010 · Dai-Ying Lee, Sheng-Yu Wang, et al. · Journal of The Electrochemical Society · 28

Proton irradiation effects on Sb-based heterojunction bipolar transistors

2009 · C. F. Lo, H.-Y. Kim, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1

Works count: 5

Citation count: 403

H-index: 4

I10-index: 4