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Matthias Stecher

OpenAlex ID: A5112002123
Electrothermal Simulation of Self-Heating in DMOS Transistors up to Thermal Runaway
2012 · Martin Pfost, Cristian Boianceanu, et al. · IEEE Transactions on Electron Devices · 78
Automotive 130 nm smart-power-technology including embedded flash functionality
2011 · Ralf Rudolf, Cajetan Wagner, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 45
Measurement and Simulation of Self-Heating in DMOS Transistors up to Very High Temperatures
2008 · Martin Pfost, Joachim Joos, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 41
High Current TLP Characterisation: An Effective Tool for the Development of Semiconductor Devices and ESD Protection Solutions
2012 · Werner Simb, David Johnsson, et al. · 37
Small embedded sensors for accurate temperature measurements in DMOS power transistors
2010 · Martin Pfost, Dragos Costachescu, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 24
Investigation and Improvement of Fast Temperature-Cycle Reliability for DMOS-Related Conductor Path Design
2007 · Tobias Smorodin, Jurgen Wilde, et al. · IEEE International Reliability Physics Symposium proceedings · 22
ESD simulation with Wunsch-Bell based behavior modeling methodology
2011 · Yiqun Cao, Ulrich Glaser, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 21
Avalanche Breakdown Delay in ESD Protection Diodes
2010 · David Johnsson, Dionyz Pogany, et al. · IEEE Transactions on Electron Devices · 21
A TLP-based Human Metal Model ESD-generator for device qualification according to IEC 61000-4-2
2010 · Yiqun Cao, David Johnsson, et al. · Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC) · 21
A failure levels study of non-snapback ESD devices for automotive applications
2010 · Yiqun Cao, Ulrich Glaser, et al. · IEEE International Reliability Physics Symposium proceedings · 17
Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms
2007 · Tobias Smorodin, Matthias Stecher, et al. · European Solid-State Device Research Conference · 15
Hot Spot Dynamics in Quasi Vertical DMOS under ESD Stress
2003 · Mane Denison, Matej Blaho, et al. · 15
On the dynamic destruction of LDMOS transistors beyond voltage overshoots in high voltage ESD
2010 · Yiqun Cao, Ulrich Glaser, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 13
Improvement of the electrical safe operating area of a DMOS transistor during ESD events
2009 · Alevtina Podgaynaya, Dionyz Pogany, et al. · IEEE International Reliability Physics Symposium proceedings · 13
Modeling of DMOS subjected to fast temperature cycle stress and improvement by a novel metallization concept
2008 · Tobias Smorodin, Jurgen Wilde, et al. · IEEE International Reliability Physics Symposium proceedings · 12
A TLP-based characterization method for transient gate biasing of MOS devices in high-voltage technologies
2010 · Joost Willemen, David Johnsson, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 11
Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes
2008 · David Johnsson, Wasinee Mamanee, et al. · IEEE International Reliability Physics Symposium proceedings · 11
Enhancement of the Electrical Safe Operating Area of Integrated DMOS Transistors With Respect to High-Energy Short Duration Pulses
2010 · Alevtina Podgaynaya, Dionyz Pogany, et al. · IEEE Transactions on Electron Devices · 8
High voltage robustness of mold compounds under different environmental conditions
2015 · Julie Paye, Albert Claudi, et al. · IEEE International Reliability Physics Symposium proceedings · 7
On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)
2011 · Martin Sauter, Werner Simbürger, et al. · Microelectronics Reliability · 7
Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS
2010 · Alevtina Podgaynaya, Ralf Rudolf, et al. · IEEE Electron Device Letters · 7
A simple approach for DMOS transistor modeling up to very high temperatures
2009 · Martin Pfost, Dragos Costachescu, et al. · CAS proceedings · 7
Seebeck difference - temperature sensors integrated into smart power technologies
2009 · Donald Dibra, Matthias Stecher, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 6
High voltage robustness of mold compounds after different treatments
2016 · Julie Paye, Albert Claudi, et al. · IEEE Electrical Insulation Conference (EIC) · 5
Modeling and improvement of a metallization system subjected to fast temperature cycle stress
2008 · Tobias Smorodin, Christina Bohm, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 4
Works count: 28
Citation count: 472
H-index: 13
I10-index: 17
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