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Author

Yukihiro Hirota

Observed name: Yukihiro HIROTA
Institution: NTT (Japan)
OpenAlex ID: A5112185698
Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal-insulator-semiconductor devices
1982 · Yukihiro Hirota, Takeshi Kobayashi · Journal of Applied Physics · 51
Effect of pyrolytic Al2O3 deposition temperature on inversion-mode InP metal-insulator-semiconductor field–effect transistor
1981 · Takeshi Kobayashi, Masamichi Okamura, et al. · Journal of Applied Physics · 48
The effects of annealing metal-insulator-semiconductor diodes employing a thermal nitride-InP interface
1982 · Yukihiro Hirota, Masamichi Okamura, et al. · Journal of Applied Physics · 16
Chemical deposition of PAsxNy films onto III–V compound semiconductors
1983 · Eiichi Yamaguchi, Yukihiro Hirota, et al. · Thin Solid Films · 15
High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 µm Wavelength
2004 · Yukihiro Hirota, Seigo Ando, et al. · Japanese Journal of Applied Physics · 14
Energy barrier height measurements of chemically vapour deposited P3N5 films by internal photoinjection
1988 · Yukihiro Hirota, Osamu Mikami · Thin Solid Films · 10
Surface controlled InP-MIS (metal-insulator-semiconductor) triodes
1981 · Yukihiro Hirota, Masamichi Okamura, et al. · Journal of Applied Physics · 9
Current-Drift Suppressed InP MISFETs with New Gate Insulator
1984 · Osamu Mikami, Masamichi Okamura, et al. · Japanese Journal of Applied Physics · 8
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The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
1987 · Masamichi Okamura, Yukihiro Hirota, et al. · Japanese Journal of Applied Physics · 7
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Structure analysis of the GaAs(001)-2 × 4 surface using medium energy ion scattering
1996 · Koji Sumitomo, Hiroshi Yamaguchi, et al. · Surface Science · 5
Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P3N5) Gate Insulator for an Inversion-Mode InP MISFET
1983 · Yukihiro Hirota, Takeshi Kobayashi, et al. · Japanese Journal of Applied Physics · 4
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Clean and Damage-Free GaAs Surface Prepared by Using the Ultrasonic Running Deionized Water Treatment.
1991 · Yukihiro HIROTA, Yoshikazu HOMMA, et al. · Hyomen Kagaku · 2
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Oxidation of GaAs Surfaces in Deionized Water Studied by X-ray Photoelectron Spectroscopy.
1996 · Nobue AOKI, Yoshikazu HOMMA, et al. · Hyomen Kagaku · 1
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Cleaning of GaAs(001) Surfaces with Deoxygenated and Deionized Water and the Effects of Thermal Treatments on the Surfaces.
1997 · Yukihiro HIROTA, Yoshio WATANABE, et al. · Hyomen Kagaku
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Control of Surface Fermi Level Position by Controlling Crystal Defects near the GaAs(001) Surface.
1997 · Yukihiro HIROTA, Fumihiko MAEDA, et al. · Hyomen Kagaku
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First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
1988 · Masamichi Okamura, Eiichi Yamaguchi, et al. · Japanese Journal of Applied Physics
First Observation of Quantum Hall Effect in InP-MISFET
1988 · Masamichi Okamura, Eiichi Yamaguchi, et al. · Japanese Journal of Applied Physics
CURRENT-DRIFT SUPPRESSED InP MISFETS WITH A NEW GATE INSULATOR
1984 · Osamu MIKAMI, Masamichi OKAMURA, et al. · International Conference on Solid State Devices and Materials (SSDM)
Chemical Vapor Deposition and Characterization of Phosphorus-Nitride (P3N5) Gate Insulator for An Inversion-Mode InP MISFET
1982 · Yukihiro Hirota, Takeshi Kobayashi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 19
Citation count: 190
H-index: 8
I10-index: 6
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