Get started
Author

Hans‐Jürgen Lugauer

Observed names: Hans-Jürgen Lugauer, Lugauer, Hans-Jürgen
ORCID: 0000-0001-7771-6072
Observed ORCID: 0000-0001-7771-6072
OpenAlex ID: A5112308254
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
2016 · Felix Nippert, Sergey Yu. Karpov, et al. · Applied Physics Letters · 108
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
2018 · Felix Nippert, Mohammad Tollabi Mazraehno, et al. · Applied Physics Letters · 79
Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs
2016 · Tilman Schimpke, Martin Mandl, et al. · physica status solidi (a) · 60
Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
2013 · Bastian Galler, Hans-Jürgen Lugauer, et al. · Applied Physics Express · 58
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
2020 · Linus Krieg, Florian Meierhofer, et al. · Nature Communications · 44
PDF
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
2016 · Felix Nippert, Sergey Karpov, et al. · Japanese Journal of Applied Physics · 42
PDF
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
2010 · Andrey Bakin, Arne Behrends, et al. · Proceedings of the IEEE · 35
High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy
2016 · Jana Hartmann, Frederik Steib, et al. · Crystal Growth & Design · 33
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
2019 · Christian Frankerl, Marc P. Hoffmann, et al. · Journal of Applied Physics · 28
Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale
2021 · Stefan Wolter, Hendrik Spende, et al. · Nanomaterials · 27
PDF
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes
2020 · Sylvia Hagedorn, Sebastian Walde, et al. · physica status solidi (a) · 23
PDF
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition
2020 · Nadine Tillner, Christian Frankerl, et al. · physica status solidi (b) · 21
PDF
Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates
2020 · Christian Frankerl, Felix Nippert, et al. · Journal of Applied Physics · 19
Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
2017 · Jana Hartmann, Frederik Steib, et al. · Journal of Crystal Growth · 19
Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization
2020 · Christian Frankerl, Felix Nippert, et al. · physica status solidi (b) · 16
PDF
Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
2020 · Christian Frankerl, Felix Nippert, et al. · Applied Physics Letters · 15
The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures
2017 · Tilman Schimpke, Adrian Avramescu, et al. · Journal of Crystal Growth · 15
Defect generation by nitrogen during pulsed sputter deposition of GaN
2018 · Frederik Steib, Thilo Remmele, et al. · Journal of Applied Physics · 13
PDF
Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE
2013 · Xue Wang, Shunfeng Li, et al. · Journal of Physics D Applied Physics · 13
PDF
Transparent conductive Ga‐doped ZnO films fabricated by MOCVD
2012 · Arne Behrends, Alexander Wagner, et al. · physica status solidi (a) · 13
Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures
2016 · Anna Nirschl, Michael Binder, et al. · Optics Express · 11
Towards nanorod LEDs: Numerical predictions and controlled growth
2011 · Christopher Kölper, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices
2018 · Jana Hartmann, Irene Manglano Clavero, et al. · physica status solidi (b) · 7
InGaN: Direct correlation of nanoscopic morphology features with optical and structural properties
2014 · Holger Koch, Frank Bertram, et al. · Applied Physics Letters · 7
Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization
2020 · Gwénolé Jacopin, Christian Frankerl, et al. · physica status solidi (b) · 3
PDF
Works count: 30
Citation count: 718
H-index: 15
I10-index: 21
Year
Topic
Type