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Chia‐Song Wu

Observed names: Chia-Song Wu, ChiaSong Wu, Wu Chia-Song
Institution: Vanung University
OpenAlex ID: A5112490247
A ultrawideband 3–10 GHz low-noise amplifier MMIC using inductive-series peaking technique
2011 · Chia-Song Wu, Chien-Huang Chang, et al. · International Conference on Electric Information and Control Engineering · 8
Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology
2009 · Wu Chia-Song, Liu Hsing-Chung · Journal of Semiconductors · 4
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Characteristics of a In/sub 0.52/(Al/sub x/Ga/sub 1-x/)/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As(0≤x≤1) heterojunction and its application on HEMT's
1997 · Yi-Jen Chan, Chia-Song Wu, et al. · IEEE Transactions on Electron Devices · 4
3 - 10 GHz Ultra-Wideband Low-Noise Amplifier Using Inductive-Series Peaking Technique with Cascode Common-Source Circuit
2011 · Chia-Song Wu, Tah-Yeong Lin, et al. · Wireless Engineering and Technology · 3
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A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology
2010 · Wu Chia-Song, Chang Chien-Huang, et al. · Journal of Semiconductors · 3
High Linearity 5.2 GHz Power Amplifier MMIC Using the Linearizer Circuit
2008 · ChiaSong Wu, ChienHuang Chang, et al. · China-Japan Joint Microwave Conference · 3
GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors
1996 · Yi-Jen Chan, Chia-Song Wu, et al. · Microwave and Optical Technology Letters · 3
High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit
2010 · Wu Chia-Song, Lin Tah-Yeong, et al. · Journal of Semiconductors · 2
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A Ka-Band Monolithic CPW-Mode T/R Modules Using 0.15 μm Gate-Length GaAs pHEMT Technology
2008 · Chia-Shih Cheng, Chien-Cheng Wei, et al. · Global Symposium on Millimeter-Waves · 2
An X-band ultra-low phase noise differential Colpitts voltage-controlled oscillator using 0.15 μm pseudomorphic high electron mobility transistor technology
2010 · Jeffrey S. Fu, Po-Yu Ke, et al. · International Journal of Electronics · 1
An improved passive inductor microwave performance on gallium nitride substrates using ion implantation technology
2010 · Jia-Shuan Wu, Chia-Song Wu, et al. · International Journal of Electronics · 1
A High Thermal Stability 3-10 GHz Low Noise Amplifier Using Current-reused Schematic with 0.5 μm pHEMT Technique
2011 · Chia-Song Wu, Hsien-Ming Wu · IETE Journal of Research
GaAs pHEMT技術に及ぼすランタン酸化物ゲート誘電体薄膜の構造及び電気特性【Powered by NICT】
2009 · Chia‐Song Wu, Liu Hsing-Chung · Journal of Semiconductors
AKa-Band Monolithic CPW-ModeT/RModules Using0.15ptm Gate-Length GaAspHEMTTechnology
2008 · Chia-Shih Cheng, Chien‐Cheng Wei, et al.
In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT's on InP substrates
2005 · Chia-Song Wu, Yi-Jen Chan, et al. · International Electron Devices and Materials Symposium
In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As heterostructure field-effect transistors fabricated on GaAs substrates
2005 · Yi Jen Chan, Ming-Ta Yang, et al. · International Electron Devices and Materials Symposium
In/sub 0.52/(Al/sub 0.9/Ga/sub 0.1/)/sub 0.48/As/In/sub 0.53/Ga/sub 0.4/$ d7As HEMTs on InP substrates
2002 · Chia-Song Wu, Yi-Jen Chan, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
In0.52Al0.48As/InxGa1‐xAs(X=0.53, 0.6) Lattice‐matched and pseudomorphic HEMTS on INP substrates
1995 · Chia‐Song Wu, Yi‐Jen Chan, et al. · Journal of the Chinese Institute of Engineers
Works count: 18
Citation count: 34
H-index: 3
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