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Zanoni

OpenAlex ID: A5112621845
Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
1996 · Meneghesso, Manfredi, et al. · European Solid-State Device Research Conference
Hot-Carrier Degradation and Oxide Charge Build-up in Self-Aligned Etched-Polysilicon npn Bipolar Transistors
1996 · Neviani, Pavan, et al. · IRIS UNIMORE (University of Modena and Reggio Emilia)
微波MESFETs中金属—GaAs相互作用及接触退化（续）
1995 · Enrico Enrico, Zanoni, et al. · 电子产品可靠性与环境试验
Hot-Electron Induced Degradation in AlGaAs/GaAs HEMTs
1992 · Canali, Magistrali, et al. · European Solid-State Device Research Conference
Explanation of Current Crowding Phenomena Induced by Impact Ionization in Advanced Si Bipolar Transistors by Means of Electrical Measurements and Light Emission Microscopy
1992 · Pavan, Vendrame, et al. · European Solid-State Device Research Conference
Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors
1991 · Zanoni, Bigliardi, et al. · European Solid-State Device Research Conference
Non-Alloyed Ge/Pd Ohmic Contact for GaAs MESFET's
1988 · Paccagnella, Canali, et al. · European Solid-State Device Research Conference
Characterization of Anomalous Latch-up Effects by Means of Infrared Microscopy and Spice Simulation
1988 · Canali, Corsi, et al. · European Solid-State Device Research Conference
Works count: 8
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