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Author

Yuichi Minoura

Observed names: Y Minoura, Y. Minoura
Institution: Fujitsu (Japan)
Observed institution: Fujitsu (Japan)
OpenAlex ID: A5112674872
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
2018 · Toshihiro Ohki, Atsushi Yamada, et al. · IEEE Electron Device Letters · 91
Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
2015 · K. Makiyama, S. Ozaki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 75
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier
2016 · Yoshitaka Niida, Yoichi Kamada, et al. · IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR) · 71
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
2019 · Yuichi Minoura, Toshihiro Ohki, et al. · Japanese Journal of Applied Physics · 62
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First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density
2021 · Shiro Ozaki, Junya Yaita, et al. · Applied Physics Express · 53
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Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
2020 · Yusuke Kumazaki, Toshihiro Ohki, et al. · Applied Physics Express · 41
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31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation
2024 · Atsushi Yamada, Yuichi Minoura, et al. · IEEE Electron Device Letters · 26
AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz
2025 · Toshihiro Ohki, Atsushi Yamada, et al. · Applied Physics Express · 19
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Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates
2019 · Yusuke Kumazaki, Toshihiro Ohki, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 19
GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process
2022 · Yuichi Minoura, Toshihiro Ohki, et al. · Applied Physics Express · 13
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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
2023 · Junji Kotani, Kozo Makiyama, et al. · Electronics Letters · 10
Recent advancement of GaN HEMT with InAlGaN barrier layer and future prospects of A1N-based electron devices
2018 · J. Kotani, A. Yamada, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs
2020 · Yoichi Kamada, Shiro Ozaki, et al. · Japanese Journal of Applied Physics · 8
InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier
2016 · K. Makiyama, S. Ozaki, et al. · IEEE Lester Eastman Conference on High Performance Devices · 7
High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier
2016 · K. Makiyama, Y. Niida, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 6
Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment
2022 · Shiro Ozaki, Junya Yaita, et al. · physica status solidi (a) · 5
Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma
2020 · Naoya Okamoto, Atsushi Takahashi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 4
Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs
2019 · Y. Minoura, T. Ohki, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
GaN-based MIS HEMT with SiAlN gate dielectric achieving over 70% PAE and 10 W mm −1 at 8 GHz
2026 · Yuichi Minoura, Atsushi Yamada, et al. · Applied Physics Express
Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers
2022 · Yusuke Kumazaki, Shiro Ozaki, et al. · International Conference on Solid State Devices and Materials (SSDM)
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
2021 · Yusuke Kumazaki, Toshihiro Ohki, et al. · IEICE Technical Report; IEICE Tech. Rep.
GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching
2020 · Naoya Okamoto, Atsushi Takahashi, et al. · The Japan Society of Applied Physics
High heat dissipation property of GaN-on-GaN HEMT bonded using atomic diffusion bonding
2019 · Naoya Okamoto, Yuichi Minoura, et al. · The Japan Society of Applied Physics
Advanced device technologies for high-frequency GaN HEMTs
2019 · Shiro Ozaki, Kozo Makiyama, et al. · The Japan Society of Applied Physics
InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)
2017 · 牧山 剛三, K. Makiyama, et al. · Institutional Repositories DataBase (IRDB)
Works count: 34
Citation count: 517
H-index: 10
I10-index: 12
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