Get started
Author

Robert J. Mears

Observed names: Mears3, Robert J., Robert J Mears, Robert Mears, Robert. J. Mears
Institution: zyBooks
ORCID: 0000-0002-0670-9518
Observed ORCID: 0000-0002-0670-9518
OpenAlex ID: A5112771086
Dynamic holography for optical interconnections II Routing holograms with predictable location and intensity of each diffraction order
2001 · Kim L. Tan, Stephen T. Warr, et al. · Journal of the Optical Society of America A · 49
Optical fibre lasers and amplifiers
1987 · Robert J. Mears · ePrints Soton (University of Southampton) · 43
PDF
Comparison of SOI Versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node
2016 · Xi Zhang, Daniel Connelly, et al. · IEEE Transactions on Electron Devices · 37
Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling
2016 · Xi Zhang, Daniel Connelly, et al. · IEEE Transactions on Electron Devices · 36
A Fourier transform theory for photon localization and evanescence in photonic bandgap structures
2001 · Michael C Parker, Robert J Mears, et al. · Journal of Optics A Pure and Applied Optics · 23
Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield
2013 · Nattapol Damrongplasit, Nuo Xu, et al. · IEEE Transactions on Electron Devices · 18
Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology
2014 · Nuo Xu, Hideki Takeuchi, et al. · IEEE Transactions on Electron Devices · 16
Dynamic holography for optical interconnections I Noise floor of low-cross-talk holographic switches
2001 · Kim L. Tan, William A. Crossland, et al. · Journal of the Optical Society of America A · 14
Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
2017 · Hideki Takeuchi, Dmitri Choutov, et al. · IEEE Journal of the Electron Devices Society · 12
Electron mobility enhancement in (100) oxygen-inserted silicon channel
2015 · Nuo Xu, Hideki Takeuchi, et al. · Applied Physics Letters · 11
Polarisation Insensitive Diffractive Flc Systems
1996 · Stephen T. Warr, Robert J. Mears · Ferroelectrics · 10
Silicon Superlattice on SOI for High Mobility and Reduced Leakage
2007 · Robert J. Mears, Marek Hytha, et al. · IEEE International SOI Conference (SOI) · 8
High-speed integrated optical wireless transceivers for in-building optical LANs
2001 · Dominic C. O'Brien, Grahame E. Faulkner, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Development of a CMOS 310-Mb/s receiver for free-space optical wireless links
2001 · Vinod A. Lalithambika, Valencia M. Joyner, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel
2017 · Robert J. Mears, Hideki Takeuchi, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 6
Computer-generated holograms optimized for illumination with partially coherent light using silicon backplane spatial light modulators as the recording device
1991 · Dominic C. O'Brien, Robert J. Mears · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs
2023 · Hiu Yung Wong, Hideki Takeuchi, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 4
Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon
2018 · Xi Zhang, Daniel Connelly, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 4
Low-threshold tunable soliton source
1993 · Ciaran R. O'Cochlain, Robert J. Mears · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel
2022 · Hideki Takeuchi, Robert J. Mears, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 3
Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices
2022 · Yi-Ann Chen, Changsoo Hong, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers
2018 · Daniel Connelly, Richard Burton, et al. · IEEE Journal of the Electron Devices Society · 3
CMOS 155-Mb/s optical wireless transmitter for indoor networks
2001 · David M. Holburn, Robert J. Mears, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Smart VLSI/FELC spatial light modulators for neural networks
1994 · T.C. B. Yu, Robert J. Mears, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole
2021 · Jeffrey A. Smith, Kai Ni, et al. · Journal of Applied Physics · 2
Works count: 52
Citation count: 351
H-index: 10
I10-index: 11
Year
Topic
Type