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Author

Jamshad Bashir

ORCID: 0009-0005-9330-5237
Observed ORCID: 0009-0005-9330-5237
OpenAlex ID: A5113174203
n + /p + GaN and n + /p + Al 0.10 Ga 0.90 N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes
2024 · Jamshad Bashir, Muhammad Usman, et al. · Journal of Information Display · 6
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Intrinsic layer-enhanced InGaP/GaAs solar cell: A path to higher efficiency
2025 · Zoya Noor, Muhammad Usman, et al. · Journal of Renewable and Sustainable Energy · 4
Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes
2024 · Jamshad Bashir, Muhammad Usman, et al. · Journal of Information Display · 4
Effect of optimized quaternary waveguides on the performance of deep ultraviolet laser diodes
2024 · Shazma Ali, Muhammad Usman, et al. · Journal of Luminescence · 3
Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs
2025 · Jamshad Bashir, Muhammad Usman, et al. · Photonics · 2
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Introducing boron gallium nitride as carriers’ source layer for efficient near-ultraviolet microLED
2024 · Jamshad Bashir, Muhammad Usman, et al. · Physica Scripta · 1
III-Arsenide separate confinement heterostructure infrared laser diodes with engineered the cladding layers
2024 · Sana Saeed, Muhammad Usman, et al. · Physica B Condensed Matter · 1
Employment of thin p-AlAs to improve near-infrared laser diodes
2024 · Sana Saeed, Muhammad Usman, et al. · Materials Science and Engineering B · 1
Monolithic InGaN-based white-light-emitting diode with enhanced red, green, and blue color uniformity via an AlGaN cascade region
2026 · Amina Hafeez, Muhammad Usman, et al. · Journal of the Optical Society of America B
Dual tunnel junction engineering for high-IQE GaN/InGaN green LEDs
2026 · Anis Naveed, Muhammad Usman, et al. · Journal of Luminescence
Cascaded deep UV and blue LEDs with integrated GaN tunnel junction
2026 · Amina Hafeez, Muhammad Usman, et al. · Chinese Physics B
Effect of Quaternary p-AlInGaN Interlayer on the Light Output Power and Gain of InGaN Green Laser Diode
2025 · Laraib Mustafa, Muhammad Usman, et al. · Transactions on Electrical and Electronic Materials
Improving Spectral Selectivity in GaAs IR Photodetectors via AlGaAs Filter Layer: A Simulation Study
2025 · Naveed, Anis, Usman, Muhammad, et al.
High output InGaN red laser diodes through implementation of AlGaInN interlayer
2024 · Laraib Mustafa, Muhammad Usman, et al.
221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers
2024 · Syeda Wageeha Shakir, Muhammad Usman, et al. · Optical and Quantum Electronics
Works count: 15
Citation count: 22
H-index: 3
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