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W.Y. Lien

Observed names: W. Y. Lien, W.-Y. Lien, Wan-Ping Lien
Institution: Micron (Taiwan)
OpenAlex ID: A5113241963
A highly scaled, high performance 45 nm bulk logic CMOS technology with 0.242 μm2 SRAM cell
2007 · Kuan-Lun Cheng, C. C. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
Pocket Implantation Effect on Drain Current Flicker Noise in Analog nMOSFET Devices
2004 · J.-W. Wu, C.-C. Cheng, et al. · IEEE Transactions on Electron Devices · 35
A 90 nm CMOS MS/RF based foundry SOC technology comprising superb 185 GHz f/sub T/ RFMOS and versatile, high-Q passive components for cost/performance optimization
2004 · C.H. Chen, C.S. Chang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
0.13- $muhbox m$ RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts
2004 · C.-C. Ho, C.-W. Kuo, et al. · IEEE Transactions on Electron Devices · 25
A Ku-band CMOS low-noise amplifier
2005 · Kuo-Liang Deng, Ming-Da Tsai, et al. · IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) · 24
A robust shallow trench isolation (STI) with SiN pull-back process for advanced DRAM technology
2003 · C.H. Li, K.C. Tu, et al. · ASMC proceedings · 13
The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips
2004 · D.D. Tang, W.C. Lin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
45nm SOI CMOS Technology with 3X hole mobility enhancement and Asymmetric transistor for high performance CPU application
2007 · Samuel K.H. Fung, H.C. Lo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor
2004 · J.C. Guo, W.Y. Lien, et al. · Symposium on VLSI Technology · 10
A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies
2003 · W.Y. Lien, W.G. Yeh, et al. · ASMC proceedings · 8
0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX/
2003 · J.C. Guo, C.H. Huang, et al. · European Microwave Conference (EuMC) · 6
A simple transmission line de-embedding method for accurate RF CMOS noise modeling
2004 · J.C. Guo, C.H. Huang, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 3
0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel
2004 · Jyh Chyurn Guo, W.Y. Lien, et al. · IEEE Transactions on Electron Devices · 2
0.13 ?m Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX
2003 · J. C. Guo, C. H. Huang, et al. · European Microwave Conference (EuMC) · 2
A Role of N2 and O2 Gasses in Post Etch Treatment (PET) for Removing Fluorocarbon Based By-Product Outgassing in DRAM Memory
2023 · Jeff J. Ye, Wan-Ping Lien, et al. · ASMC proceedings · 1
Halo and LDD Engineering for Multiple VT High Performance Analog Devices in 0.13μm CMOS Technology
2004 · J. C. Guo, W.Y. Lien, et al. · International Conference on Solid State Devices and Materials (SSDM)
Modeling of Pocket Implant Effect on Drain Current Flicker Noise in High Performance Analog CMOS Devices
2003 · Jun-Wei Wu, J. C. Guo, et al. · International Conference on Solid State Devices and Materials (SSDM)
0.13μm Low-K/Cu Logic CMOS Based Technology for High Performance Analog Devices
2003 · J. C. Guo, W.Y. Lien, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 19
Citation count: 217
H-index: 9
I10-index: 9
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