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A. Yu. Andreev

Observed names: A Yu Andreev, A. Y. Andreev, A.Y Andreev, A.Yu. Andreev, A. Yu. Andreev, Andrey Y. Andreev, Andrey Yu Andreev, Andrey Yu. Andreev
ORCID: 0009-0002-6239-663X
Observed ORCID: 0009-0002-6239-663X
OpenAlex ID: A5113258556
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
2019 · Maxim A. Ladugin, Irina V. Yarotskaya, et al. · Crystals · 28
High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures
2006 · A. Yu. Andreev, A. Yu. Leshko, et al. · Semiconductors · 22
AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
2013 · A A Marmalyuk, M A Ladugin, et al. · Quantum Electronics · 14
Quantum cascade lasers for the 8-μm spectral range: technology, design, and analysis
2023 · Vladislav V. Dudelev, Evgeniia D. Cherotchenko, et al. · Physics-Uspekhi · 11
High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
2013 · M A Ladugin, Yu P Koval', et al. · Quantum Electronics · 11
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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
2017 · M A Ladugin, A A Marmalyuk, et al. · Quantum Electronics · 9
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
2009 · A. Yu. Andreev, S. A. Zorina, et al. · Semiconductors · 8
The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
2002 · R.Kh Akchurin, A.Y Andreev, et al. · Applied Surface Science · 8
Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
2021 · N.A. Volkov, A.Yu. Andreev, et al. · Quantum Electronics · 7
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Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides
2021 · N.A. Volkov, V.N. Svetogorov, et al. · Quantum Electronics · 6
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Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
1999 · A. Yu. Andreev, B. A. Andreev, et al. · Semiconductors · 5
Heterostructures of Quantum-Cascade Lasers Based on Composite Active Regions
2023 · A. V. Babichev, A. G. Gladyshev, et al. · Bulletin of the Russian Academy of Sciences Physics · 4
Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD
2016 · I I Zasavitskii, A N Zubov, et al. · Quantum Electronics · 4
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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
2020 · K.Yu. Telegin, M.A. Ladugin, et al. · Quantum Electronics · 3
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Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition
2004 · R. Kh. Akchurin, A. Yu. Andreev, et al. · Inorganic Materials · 3
High-Power Laser Diode Arrays Based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs Quantum-Well Heterostructures
2023 · N. V. Gul’tikov, K. Yu. Telegin, et al. · Bulletin of the Lebedev Physics Institute · 2
Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al x Ga1–x As/Al y Ga1–y As heterostructure with optical and electron beam pumping
2022 · M.R. Butaev, Ya.K. Skasyrsky, et al. · Quantum Electronics · 2
Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)
2022 · N.A. Volkov, K.Yu. Telegin, et al. · Quantum Electronics · 2
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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
2021 · N.A. Volkov, T.A. Bagaev, et al. · Quantum Electronics · 2
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Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures
2014 · A. A. Marmalyuk, A. Yu. Andreev, et al. · Semiconductors · 2
Scanning spreading resistance microscopy for p – n junction and carrier distribution analysis in InGaAs/AlGaAs quantum well laser heterostructure
2025 · D. E. Sviridov, M. R. Butaev, et al. · Journal of Applied Physics · 1
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High-power QCL for 8 μm spectral range
2024 · V.V. Dudelev, E.D. Cherotchenko, et al. · International Conference Laser Optics (ICLO) · 1
Study of a Semiconductor Disk Laser with a Wavelength of 780 nm Based on a Heterostructure with AlxGa1 – xAs/AlyGa1 – yAs Quantum Wells under Optical Pumping with Different Radiation Wavelengths
2023 · V. I. Kozlovskii, S. M. Zhenishbekov, et al. · Bulletin of the Lebedev Physics Institute · 1
Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
2019 · A.Yu. Andreev, T.A. Bagaev, et al. · Quantum Electronics · 1
Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy
2019 · M. A. Ladugin, A. Yu. Andreev, et al. · Inorganic Materials · 1
Works count: 40
Citation count: 158
H-index: 8
I10-index: 5
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