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Cheng-Tyng Yen

OpenAlex ID: A5113282270
High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
2017 · Fu-Jen Hsu, Cheng-Tyng Yen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 73
Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping
2016 · Cheng-Tyng Yen, Chien-Chung Hung, et al. · Applied Physics Letters · 46
Reduction in critical current density for spin torque transfer switching with composite free layer
2008 · Cheng-Tyng Yen, Wei-Chuan Chen, et al. · Applied Physics Letters · 39
1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination
2015 · Cheng-Tyng Yen, Chien-Chung Hung, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 34
Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs
2019 · Der-Sheng Chao, Hua-Yu Shih, et al. · Japanese Journal of Applied Physics · 30
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Oxide Breakdown Reliability of SiC MOSFET
2019 · Cheng-Tyng Yen, H.Y. Lee, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · 24
Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier
2018 · Cheng-Tyng Yen, Fu-Jen Hsu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 20
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
2017 · Bing-Yue Tsui, Jung-Chien Cheng, et al. · Solid-State Electronics · 19
High accuracy large-signal SPICE model for silicon carbide MOSFET
2018 · Fu-Jen Hsu, Cheng-Tyng Yen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 18
Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS
2019 · Fu-Jen Hsu, Cheng-Tyng Yen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 15
A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process
2013 · Chwan-Ying Lee, Cheng-Tyng Yen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11
A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures
2024 · Fu-Jen Hsu, Ting-Fu Chang, et al. · IEEE Transactions on Power Electronics · 8
Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures
2024 · Fu-Jen Hsu, Ting-Fu Chang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes
2023 · Fu-Jen Hsu, Hsiang-Ting Hung, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
A comprehensive study on the oxidation of 4H-SiC in diluted N 2 O ambient
2017 · Yuan-Hung Tseng, Tsung-Han Wu, et al. · Japanese Journal of Applied Physics · 3
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Characteristics improvement of 4H-SiC using termination with P-Well enclosure in P-Plus floating guard rings for 1700V DMOSFETs
2014 · Chien-Chung Hung, Cheng-Tyng Yen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)
2022 · Fu-Jen Hsu, Cheng-Tyng Yen, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 2
SiC MOSFET with Integrated Zener Diode as an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection
2019 · Cheng-Tyng Yen, Fu-Jen Hsu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme
2007 · Yuan-Jen Lee, Chien-Chung Hung, et al. · Applied Physics Letters · 2
Performance Comparison and Design Issue on Different GaN Power Transistor Structures
2012 · Chwan-Ying Lee, Chien-Chung Hung, et al. · MRS Proceedings · 1
Reduction of surface roughness and Néel coupling in perpendicular magnetic tunnel junctions with L1-FePt electrodes by plasma treatments
2011 · Wu-Chang Tsai, Jian-Wei Lee, et al. · Journal of Applied Physics · 1
An 850V Gate Driver Integrated 4H-SiC Planar MOSFET SiP with 560MW/cm 2 BFOM and 10MHz High-Speed Switching Capability
2026 · Fu-Jen Hsu, Hsiang-Ting Hung, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
A Coupled-Charge Driven Reverse-Recovery SPICE Model for SiC MOSFETs Considering Quasi-Floating Channel Effects
2026 · Fu-Jen Hsu, Ting-Fu Chang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
A Driver-Integrated 4H-SiC SiP with 560 MW/cm 2 BFOM and 10MHz High-Speed Switching Capability
2026 · Fu-Jen Hsu Frane, Hsiang-Ting Hung, et al. · IEEE Transactions on Power Electronics
An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)
2023 · Fu-Jen Hsu, Cheng-Tyng Yen, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Works count: 28
Citation count: 357
H-index: 11
I10-index: 11
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