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Naoko Matsui

Observed names: Matsui, Naoko, 松井 尚子
ORCID: 0009-0004-3075-0598
Observed ORCID: 0009-0004-3075-0598
OpenAlex ID: A5113289718
Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio
2024 · Shinnosuke Yasuoka, Takao Shimizu, et al. · Advanced Materials Interfaces · 14
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · Applied Physics Letters · 12
Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors
2025 · Nana Sun, Kazuki Okamoto, et al. · APL Materials · 7
Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm
2025 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials · 2
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Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM
2024 · Soshun Doko, Naoko Matsui, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 1
Bottom Electrode Crystallinity-Driven Enhancement of Switching Behavior in Scaled (Al0.9Sc0.1)N Films
2026 · Nana Sun, Soshun Doko, et al. · ACS Applied Electronic Materials
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40 nm-thick Pt/(Al0.9Sc0.1)N/Pt ferroelectric capacitor stacks for logic-embedded memory on 300 mm Si with wafer-scale uniformity and process stability
2026 · Soshun Doko, Naoko Matsui, et al. · Microelectronic Engineering
PDF
Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)
2026 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials
PDF
Stable ferroelectric property at high temperature under nydrogen gas in (Al, Sc)N thin films
2025 · Nana Sun, 岡本 一輝, et al. · Institutional Repositories DataBase (IRDB)
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 12
Citation count: 36
H-index: 3
I10-index: 2
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