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Masatake Katayama

Observed names: Katayama, M Katayama, M. Katayama, Masatake KATAYAMA, Masatake Katayama Masatake Katayama
OpenAlex ID: A5113544020
Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
1992 · H Yamagishi, I Fusegawa, et al. · Semiconductor Science and Technology · 170
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Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure
1996 · Hitoshi Habuka, Takatoshi Nagoya, et al. · Journal of Crystal Growth · 105
Initial stage of oxidation of hydrogen-terminated silicon surfaces
1996 · Takeo Hattori, Takeshi Aiba, et al. · Applied Surface Science · 50
Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2×1 Surface
1995 · Takeshi Aiba, Ken Yamauchi, et al. · Japanese Journal of Applied Physics · 45
Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure
1997 · Hitoshi Habuka, Masatake Katayama, et al. · Journal of Crystal Growth · 36
Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor
1995 · Hitoshi Habuka, Takatoshi Nagoya, et al. · Journal of The Electrochemical Society · 33
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Roughness of Silicon Surface Heated in Hydrogen Ambient
1995 · Hitoshi Habuka, Hitoshi Tsunoda, et al. · Journal of The Electrochemical Society · 33
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Valence band edge of ultra-thin silicon oxide near the interface
1998 · H. Nohira, A. Omura, et al. · Applied Surface Science · 19
Numerical Evaluation of Silicon-Thin Film Growth from SiHCl3-H2 Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor
1994 · Hitoshi Habuka Hitoshi Habuka, Masatake Katayama Masatake Katayama, et al. · Japanese Journal of Applied Physics · 19
In situ cleaning method for silicon surface using hydrogen fluoride gas and hydrogen chloride gas in a hydrogen ambient
1998 · Hitoshi Habuka, Toru Otsuka, et al. · Journal of Crystal Growth · 16
Gas flow and heat transfer in a pancake chemical vapor deposition reactor
1995 · Hitoshi Habuka, Masanori Mayusumi, et al. · Journal of Crystal Growth · 9
Breakdown Mechanism of Oxide Grown on Czochralski Silicon Wafers
1997 · Satoshi Oka Satoshi Oka, Masatake Katayama Masatake Katayama · Japanese Journal of Applied Physics · 7
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Haze Generation on Silicon Surface Heated in Hydrogen Ambient at Atmospheric Pressure
1997 · Hitoshi Habuka, Toru Otsuka, et al. · Journal of The Electrochemical Society · 6
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Effect of Transport Phenomena on Boron Concentration Profiles in Silicon Epitaxial Wafers
1996 · Hitoshi Habuka, Masanori Mayusumi, et al. · Journal of The Electrochemical Society · 4
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Computation Transport Phenomena in Chemical Engineering. Transport of Dopant Gas during Silicon Epitaxial Thin-Film Growth in a Horizontal Reactor.
1997 · Hitoshi Habuka, Masatake Katayama, et al. · KAGAKU KOGAKU RONBUNSHU · 2
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Influence of Surface Charges on Four-Point-Probe Resistivity Measurement for N-Type Silicon Epitaxial Wafers
1994 · K Mitani, S. Saisu, et al. · Elsevier eBooks · 1
Layer growth of CdSb phase in the Cd-Sb diffusion couple at high pressure
1977 · Masatake Katayama, Kimihiko Hara, et al. · Institutional Repositories DataBase (IRDB) · 1
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Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface
1996 · Hiroshi NOHIRA, Yohichi OKUBE, et al. · International Conference on Solid State Devices and Materials (SSDM)
Electrical measurement of ZnSb and CdSb phases in the diffusion zone at high pressure
1979 · Katayama · Institutional Repositories DataBase (IRDB)
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Kinetic study of the solid state reaction of zinc and arsenic at high temperature and high pressure
1975 · Masatake Katayama, Kimihiko Hara, et al. · Kyoto University Research Information Repository (Kyoto University)
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Kinetic Aspects on Solid-State Transformations under High Pressure (Commemoration Issue Dedicated to Professor Eiji Suito on the Occasion of his Retirement)
1975 · Jirō Ōsugi, Kimihiko Hara, et al. · Institutional Repositories DataBase (IRDB)
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Works count: 21
Citation count: 556
H-index: 10
I10-index: 10
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