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Andrei V. Lyutetskiy

Observed names: A Lyutetskiy, A V Lyutetskiy, A. Lyutetskiy, A. V. Lyutetskiy, A.V. Lyutetskiy, Andrei Lyutetskiy
Institution: Ioffe Institute
ORCID: 0009-0007-6516-0936
Observed ORCID: 0009-0007-6516-0936
OpenAlex ID: A5113606443
Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
2014 · D A Veselov, V A Kapitonov, et al. · Quantum Electronics · 35
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Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
2017 · A A Marmalyuk, Yu L Ryaboshtan, et al. · Quantum Electronics · 23
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Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
2015 · D A Veselov, N A Pikhtin, et al. · Quantum Electronics · 20
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A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
2010 · D. A. Vinokurov, V. P. Konyaev, et al. · Semiconductors · 19
Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
2018 · A A Marmalyuk, Yu L Ryaboshtan, et al. · Quantum Electronics · 14
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Study of the absorption coefficient in layers of a semiconductor laser heterostructure
2015 · D A Veselov, N A Pikhtin, et al. · Quantum Electronics · 14
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850-nm diode lasers based on AlGaAsP/GaAs heterostructures
2012 · D. A. Vinokurov, V. A. Kapitonov, et al. · Semiconductors · 13
Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
2003 · P.V. Bulaev, A.A. Marmalyuk, et al. · Journal of Crystal Growth · 12
Properties of AlN films deposited by reactive ion-plasma sputtering
2015 · N. A. Bert, A. D. Bondarev, et al. · Semiconductors · 11
Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)
2012 · I. S. Shashkin, D. A. Vinokurov, et al. · Semiconductors · 11
Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)
2012 · I. S. Shashkin, D. A. Vinokurov, et al. · Semiconductors · 11
Temperature delocalization of charge carriers in semiconductor lasers
2010 · S. O. Slipchenko, I. S. Shashkin, et al. · Semiconductors · 11
High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm
2018 · V. V. Dudelev, S. N. Losev, et al. · Physics of the Solid State · 9
Two-state operation of high-power semiconductor lasers with a thick quantum well
2017 · D. A. Veselov, K. R. Ayusheva, et al. · Journal of Applied Physics · 9
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
2016 · D. A. Veselov, I. S. Shashkin, et al. · Semiconductors · 9
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures
2009 · A. V. Lyutetskiy, N. A. Pikhtin, et al. · Semiconductors · 9
Quenching of lasing in high power semiconductor laser
2009 · S. O. Slipchenko, D. A. Vinokurov, et al. · Semiconductors · 9
On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures
2014 · N. A. Pikhtin, A. V. Lyutetskiy, et al. · Semiconductors · 8
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
2009 · A. Yu. Andreev, S. A. Zorina, et al. · Semiconductors · 8
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers
2018 · V. V. Mamutin, A. P. Vasilyev, et al. · Semiconductors · 7
Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
2014 · V V Zolotarev, A Yu Leshko, et al. · Quantum Electronics · 7
Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
2014 · V. V. Shamakhov, D. N. Nikolaev, et al. · Semiconductors · 7
850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
2013 · D. A. Vinokurov, A. V. Lyutetskiy, et al. · Semiconductors · 7
Acoustoelectron interaction in quantum laser heterostructures
2013 · L. A. Kulakova, N. S. Averkiev, et al. · Semiconductors · 7
Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)
2010 · M. A. Ladugin, A. V. Lyutetskiy, et al. · Semiconductors · 7
Works count: 79
Citation count: 362
H-index: 11
I10-index: 12
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