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K. Akita

Observed names: Akita Kenichi, Kenichi Akita
OpenAlex ID: A5113641760
Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
2013 · T. Ohyanagi, N. Takaura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices
2013 · Takasumi Ohyanagi, Norikatsu Takaura, et al. · Japanese Journal of Applied Physics · 24
55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures
2014 · N. Takaura, T. Ohyanagi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films
2014 · M. Tai, T. Ohyanagi, et al. · Symposium on VLSI Technology · 15
A low power phase change memory using low thermal conductive doped-Ge2Sb2Te 5 with nano-crystalline structure
2012 · T. Morikawa, K. Akita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Fabrication process for pillar GeTe/Sb 2 Te 3 superlattice topological-switching random access memory
2015 · Mitsuharu Tai, Masaharu Kinoshita, et al. · Japanese Journal of Applied Physics · 9
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A 4F 2 -cross-point phase change memory using nano-crystalline doped GeSbTe material
2015 · Norikatsu Takaura, Masaharu Kinoshita, et al. · Japanese Journal of Applied Physics · 8
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Understanding the switching mechanism of charge-injection GeTe/Sb2Te3 phase change memory through electrical measurement and analysis of 1R test structure
2014 · N. Takaura, T. Ohyanagi, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 5
A 50-nm 1.2-V GexTe1−x/Sb2Te3 superlattice topological-switching random-access memory (TRAM)
2015 · M. Tai, T. Ohyanagi, et al. · Symposium on VLSI Technology · 4
Fabrication of topological-switching RAM (TRAM)
2014 · N. Takaura, T. Ohyanagi, et al. · Non-Volatile Memory Technology Symposium · 3
Chemical Vapor Deposition GeTe/Sb2Te3 Super-Lattice Phase Change Memory
2015 · M. Kitamura, T. Morikawa, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
ナノ結晶ドープGeSbTe材料を用いた4F 2 -クロスポイント相変化メモリー
2015 · N. Takaura, Masaharu Kinoshita, et al. · Japanese Journal of Applied Physics
A 4F2-cross-point Phase Change Memory Using Nano-crystalline Doped GeSbTe Material
2014 · T. Morikawa, K. Akita, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 13
Citation count: 128
H-index: 7
I10-index: 5
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