Author

G. M. Gur’yanov

Observed names: G. Guryanov, G. M. Gur'yanov, G. M. Guryanov, G.M. Guryanov, Giorgiy M. Guryanov

Observed institutions: Russian Academy of Sciences, Corning (United States), North Carolina State University, Institute for Analytical Instrumentation

OpenAlex ID: A5113900382

Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

2005 · N. Nishiyama, C. Caneau, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 116

High efficiency long wavelength VCSEL on InP grown by MOCVD

2003 · N. Nishiyama, C. Caneau, et al. · Electronics Letters · 80

Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

1995 · G. E. Cirlin, G. M. Guryanov, et al. · Applied Physics Letters · 68

Experimental study of the orientation dependence of indium incorporation in GaInN

2015 · Rajaram Bhat, Giorgiy M. Guryanov · Journal of Crystal Growth · 26

STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques

1996 · G.M. Guryanov, G.E. Cirlin, et al. · Surface Science · 26

10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- /spl mu/m InP-based vertical-cavity surface-emitting lasers

2005 · N. Nishiyama, C. Caneau, et al. · IEEE Photonics Technology Letters · 21

Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

2000 · R. Loesing, G. M. Guryanov, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 20

Effect of growth kinetics on the quantum dot arrays formation on vicinal surfaces

1997 · G.E. Cirlin, V.N. Petrov, et al. · Surface Science · 19

Optimization of secondary ion mass spectrometry detection limit for N in SiC

2003 · A. L. Pivovarov, F. A. Stevie, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 18

An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

1996 · G.M. Guryanov, G.E. Cirlin, et al. · Surface Science · 18

Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy

1995 · G.M. Guryanov, G.E. Cirlin, et al. · Surface Science · 17

SIMS quantitative depth profiling of matrix elements in semiconductor layers

2006 · G. Guryanov, T.P. St. Clair, et al. · Applied Surface Science · 14

Temperature, modulation and reliability characteristics of 1.3 μm-VCSELs on InP with AlGaInAs/InP lattice matched DBR

2005 · N. Nishiyama, C. Caneau, et al. · IEEE International Semiconductor Laser Conference (ISLC) · 7

System for recording and analysis of reflection high-energy electron diffraction patterns

1997 · G. M. Gur’yanov, V. N. Demidov, et al. · Technical Physics · 7

Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams

1997 · G.E. Cirlin, V.N. Petrov, et al. · Czechoslovak Journal of Physics · 6

Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O2+, and CsC6− primary ion beams

2002 · R. Loesing, G. M. Guryanov, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 5

Self-organization of strained quantum-size In x Ga 1 - x As structures grown on misoriented (100) surfaces of GaAs during submonolayer molecular-beam epitaxy

1995 · G. M. Gur’yanov, Г. Э. Цырлин, et al. · Semiconductors · 5

High optical reflection resistance of 1.3-μm InP-based isolator-free VCSELs: 10-Gbps error-free transmission under reflection

2006 · N. Nishiyama, C. Caneau, et al. · 2

Polarization stable 1.3 μm InP based VCSELs grown on [311]A substrates

2005 · C. Caneau, N. Nishiyama, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2

Cluster ion emission from nitrogen-doped GaAs and optimization of SIMS conditions for nitrogen analysis

2004 · G.M. Guryanov · Applied Surface Science · 2

Effect of heat-treatment conditions on the surface morphology of gallium arsenide grown on vicinal GaAs (100) substrates by molecular-beam epitaxy

1994 · N. N. Ledentsov, G. M. Gur’yanov, et al. · Semic · 2

F and Cl detection limits in secondary ion mass spectrometry measurements of Si and SiO2 samples

2010 · A. L. Pivovarov, G. M. Guryanov · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1